Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2003
• Main Authors: Figielski, T., Wosinski, T., Morawski, A., Pelya, O., Makosa, A., Dobrowolski, W., Wrobel, J., Sadowski, J., Jagielski, J., Ratajczak, J.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117941
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ.

We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanome...