High-resistance low-doped GaAs and AlGaAs layers obtained by LPE
Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed under influence of the doping impurities applied. Obtained results are explained...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2003 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117942 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | High-resistance low-doped GaAs and AlGaAs layers obtained by LPE / S.I. Krukovsky, D.M. Zayachuk, O.V. Rybak, I.O. Mryhin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 55-57. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862545690283999232 |
|---|---|
| author | Krukovsky, S.I. Zayachuk, D.M. Rybak, O.V. Mryhin, I.O. |
| author_facet | Krukovsky, S.I. Zayachuk, D.M. Rybak, O.V. Mryhin, I.O. |
| citation_txt | High-resistance low-doped GaAs and AlGaAs layers obtained by LPE / S.I. Krukovsky, D.M. Zayachuk, O.V. Rybak, I.O. Mryhin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 55-57. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed under influence of the doping impurities applied. Obtained results are explained by simultaneous Yb gettering action with respect to oxygen and silicon in the solution-melt, and also by lowering the concentration of Si in the films due to Al entering into Ga sub-lattice.
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| first_indexed | 2025-11-25T06:39:23Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-117942 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T06:39:23Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Krukovsky, S.I. Zayachuk, D.M. Rybak, O.V. Mryhin, I.O. 2017-05-27T16:48:08Z 2017-05-27T16:48:08Z 2003 High-resistance low-doped GaAs and AlGaAs layers obtained by LPE / S.I. Krukovsky, D.M. Zayachuk, O.V. Rybak, I.O. Mryhin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 55-57. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 73.61.Ey https://nasplib.isofts.kiev.ua/handle/123456789/117942 Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed under influence of the doping impurities applied. Obtained results are explained by simultaneous Yb gettering action with respect to oxygen and silicon in the solution-melt, and also by lowering the concentration of Si in the films due to Al entering into Ga sub-lattice. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics High-resistance low-doped GaAs and AlGaAs layers obtained by LPE Article published earlier |
| spellingShingle | High-resistance low-doped GaAs and AlGaAs layers obtained by LPE Krukovsky, S.I. Zayachuk, D.M. Rybak, O.V. Mryhin, I.O. |
| title | High-resistance low-doped GaAs and AlGaAs layers obtained by LPE |
| title_full | High-resistance low-doped GaAs and AlGaAs layers obtained by LPE |
| title_fullStr | High-resistance low-doped GaAs and AlGaAs layers obtained by LPE |
| title_full_unstemmed | High-resistance low-doped GaAs and AlGaAs layers obtained by LPE |
| title_short | High-resistance low-doped GaAs and AlGaAs layers obtained by LPE |
| title_sort | high-resistance low-doped gaas and algaas layers obtained by lpe |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117942 |
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