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High-resistance low-doped GaAs and AlGaAs layers obtained by LPE

Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed under influence of the doping impurities applied. Obtained results are explained...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2003
Hauptverfasser: Krukovsky, S.I., Zayachuk, D.M., Rybak, O.V., Mryhin, I.O.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117942
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:High-resistance low-doped GaAs and AlGaAs layers obtained by LPE / S.I. Krukovsky, D.M. Zayachuk, O.V. Rybak, I.O. Mryhin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 55-57. — Бібліогр.: 9 назв. — англ.

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