High-resistance low-doped GaAs and AlGaAs layers obtained by LPE
Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed under influence of the doping impurities applied. Obtained results are explained...
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| Datum: | 2003 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117942 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | High-resistance low-doped GaAs and AlGaAs layers obtained by LPE / S.I. Krukovsky, D.M. Zayachuk, O.V. Rybak, I.O. Mryhin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 55-57. — Бібліогр.: 9 назв. — англ. |