Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2003
• Hauptverfasser: Elizarov, A.I., Kurbanov, K.R., Bogoboyashchyy, V.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117948
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals / V.V. Bogoboyashchyy, A.I. Elizarov, K.R. Kurbanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 47-52. — Бібліогр.: 18 назв. — англ.

Results of investigations of mercury vacancy diffusion in the narrow-gap Hg₁-xCdxTe crystals are presented. A new theory for mercury diffusion in a gradient of native defect concentration is proposed. The theory takes into account the effect of charged defect drift in the internal electric field ari...