Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals
Results of investigations of mercury vacancy diffusion in the narrow-gap Hg₁-xCdxTe crystals are presented. A new theory for mercury diffusion in a gradient of native defect concentration is proposed. The theory takes into account the effect of charged defect drift in the internal electric field ari...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2003 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117948 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals / V.V. Bogoboyashchyy, A.I. Elizarov, K.R. Kurbanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 47-52. — Бібліогр.: 18 назв. — англ. |