Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique
Volume-gradient photovoltage and birefrigence caused by a difference of main mechanical stress components have been studied in the Ge-monocrystal with step-like distribution of the doping impurity concentration, N. The qualitative agreement between the function obtained by integration of the spatial...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 1999 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117956 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique / B.K. Serdega, Ye.F. Venger, Ye.V. Nikitenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 153-156. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862588616369242112 |
|---|---|
| author | Serdega, B.K. Venger, Ye.F. Nikitenko, Ye.V. |
| author_facet | Serdega, B.K. Venger, Ye.F. Nikitenko, Ye.V. |
| citation_txt | Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique / B.K. Serdega, Ye.F. Venger, Ye.V. Nikitenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 153-156. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Volume-gradient photovoltage and birefrigence caused by a difference of main mechanical stress components have been studied in the Ge-monocrystal with step-like distribution of the doping impurity concentration, N. The qualitative agreement between the function obtained by integration of the spatial dependence of the anisotropy and of the coordinate dependence of the photovoltage was observed. Using this fact, the conclusion is made that the features of thermoelastic mechanical stress can be distribution of expressed by the dependence |σz - σy| ~ d²N/dz². 
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| first_indexed | 2025-11-27T02:18:58Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117956 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T02:18:58Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Serdega, B.K. Venger, Ye.F. Nikitenko, Ye.V. 2017-05-27T17:42:19Z 2017-05-27T17:42:19Z 1999 Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique / B.K. Serdega, Ye.F. Venger, Ye.V. Nikitenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 153-156. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 61.72 https://nasplib.isofts.kiev.ua/handle/123456789/117956 535.3 Volume-gradient photovoltage and birefrigence caused by a difference of main mechanical stress components have been studied in the Ge-monocrystal with step-like distribution of the doping impurity concentration, N. The qualitative agreement between the function obtained by integration of the spatial dependence of the anisotropy and of the coordinate dependence of the photovoltage was observed. Using this fact, the conclusion is made that the features of thermoelastic mechanical stress can be distribution of expressed by the dependence |σz - σy| ~ d²N/dz². 
 Remove selected en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique Article published earlier |
| spellingShingle | Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique Serdega, B.K. Venger, Ye.F. Nikitenko, Ye.V. |
| title | Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique |
| title_full | Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique |
| title_fullStr | Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique |
| title_full_unstemmed | Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique |
| title_short | Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique |
| title_sort | thermoelasticity in ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117956 |
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