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Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique

Volume-gradient photovoltage and birefrigence caused by a difference of main mechanical stress components have been studied in the Ge-monocrystal with step-like distribution of the doping impurity concentration, N. The qualitative agreement between the function obtained by integration of the spatial...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:1999
Main Authors: Serdega, B.K., Venger, Ye.F., Nikitenko, Ye.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/117956
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique / B.K. Serdega, Ye.F. Venger, Ye.V. Nikitenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 153-156. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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