Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique
Volume-gradient photovoltage and birefrigence caused by a difference of main mechanical stress components have been studied in the Ge-monocrystal with step-like distribution of the doping impurity concentration, N. The qualitative agreement between the function obtained by integration of the spatial...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 1999 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117956 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique / B.K. Serdega, Ye.F. Venger, Ye.V. Nikitenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 153-156. — Бібліогр.: 7 назв. — англ. |