The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors
It is shown that under influence of irreversible gigantic modification in monocrystalline A³B³ and A²B⁶ semiconductors, local areas with the highly changed refractive index are created. It was shown that a complex refraction index of CdS, CdTe and GaAs semiconductor samples after their modification...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2003 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117957 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors / A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 86-90. — Бібліогр.: 6 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862547458476736512 |
|---|---|
| author | Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. |
| author_facet | Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. |
| citation_txt | The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors / A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 86-90. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | It is shown that under influence of irreversible gigantic modification in monocrystalline A³B³ and A²B⁶ semiconductors, local areas with the highly changed refractive index are created. It was shown that a complex refraction index of CdS, CdTe and GaAs semiconductor samples after their modification was essentially changed. For example, the complex refraction index of CdS samples was changed from the magnitude N = 2.75 + i2.8113 up to the magnitude N1 = 1.9 + i0.035. In addition, the real and imaginary parts of a complex refraction index of CdS decrease, accordingly, by 0.85 and 2.7763. And its absorption index was 80-fold decreased. The theoretical analysis of experimental results has shown that quantum dots and quantum wires are responsible for such huge changes of the refractive index, which arise in modified areas of samples. It was shown that boundaries between modified and non-modified areas of the sample stretch down to the depth not less than 11mm. It was shown that photon crystals with one-dimensionality and two-dimensionality can be effectively formed for visible and ultra-violet ranges without using the complex lithographical technique.
|
| first_indexed | 2025-11-25T15:43:57Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117957 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T15:43:57Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. 2017-05-27T17:52:21Z 2017-05-27T17:52:21Z 2003 The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors / A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 86-90. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 42.70.Qs https://nasplib.isofts.kiev.ua/handle/123456789/117957 It is shown that under influence of irreversible gigantic modification in monocrystalline A³B³ and A²B⁶ semiconductors, local areas with the highly changed refractive index are created. It was shown that a complex refraction index of CdS, CdTe and GaAs semiconductor samples after their modification was essentially changed. For example, the complex refraction index of CdS samples was changed from the magnitude N = 2.75 + i2.8113 up to the magnitude N1 = 1.9 + i0.035. In addition, the real and imaginary parts of a complex refraction index of CdS decrease, accordingly, by 0.85 and 2.7763. And its absorption index was 80-fold decreased. The theoretical analysis of experimental results has shown that quantum dots and quantum wires are responsible for such huge changes of the refractive index, which arise in modified areas of samples. It was shown that boundaries between modified and non-modified areas of the sample stretch down to the depth not less than 11mm. It was shown that photon crystals with one-dimensionality and two-dimensionality can be effectively formed for visible and ultra-violet ranges without using the complex lithographical technique. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors Article published earlier |
| spellingShingle | The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. |
| title | The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors |
| title_full | The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors |
| title_fullStr | The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors |
| title_full_unstemmed | The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors |
| title_short | The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors |
| title_sort | way of photonic crystal formation in a³b³ and a²b⁶ semiconductors |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117957 |
| work_keys_str_mv | AT kamuzam thewayofphotoniccrystalformationina3b3anda2b6semiconductors AT oleksenkopph thewayofphotoniccrystalformationina3b3anda2b6semiconductors AT kamuzoa thewayofphotoniccrystalformationina3b3anda2b6semiconductors AT kamuzvg thewayofphotoniccrystalformationina3b3anda2b6semiconductors AT kamuzam wayofphotoniccrystalformationina3b3anda2b6semiconductors AT oleksenkopph wayofphotoniccrystalformationina3b3anda2b6semiconductors AT kamuzoa wayofphotoniccrystalformationina3b3anda2b6semiconductors AT kamuzvg wayofphotoniccrystalformationina3b3anda2b6semiconductors |