The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors

It is shown that under influence of irreversible gigantic modification in monocrystalline A³B³ and A²B⁶ semiconductors, local areas with the highly changed refractive index are created. It was shown that a complex refraction index of CdS, CdTe and GaAs semiconductor samples after their modification...

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Datum:2003
Hauptverfasser: Kamuz, A.M., Oleksenko, P.Ph., Kamuz, O.A., Kamuz, V.G.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117957
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors / A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 86-90. — Бібліогр.: 6 назв. — англ.

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