Origin of surface layer on common substrates for functional material films probed by ellipsometry
A multiple angle ellipsometric method is used to investigate thin film layers on common substrates (gadolinium gallium garnet-GGG, sapphire-Al₂O₃, and glass ceramic sitall) for functional material films. The method evaluates fundamental optical constants and thicknesses of the layers. Dielectric fun...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117962 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Origin of surface layer on common substrates for functional material films probed by ellipsometry / A.I. Belyaeva, A.A. Galuza, A.D. Kudlenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 81-85. — Бібліогр.: 8 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-117962 |
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Belyaeva, A.I. Galuza, A.A. Kudlenko, A.D. 2017-05-27T18:06:53Z 2017-05-27T18:06:53Z 2003 Origin of surface layer on common substrates for functional material films probed by ellipsometry / A.I. Belyaeva, A.A. Galuza, A.D. Kudlenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 81-85. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 68.35.-p, 78.68.+m https://nasplib.isofts.kiev.ua/handle/123456789/117962 A multiple angle ellipsometric method is used to investigate thin film layers on common substrates (gadolinium gallium garnet-GGG, sapphire-Al₂O₃, and glass ceramic sitall) for functional material films. The method evaluates fundamental optical constants and thicknesses of the layers. Dielectric functions for the surface layers on such kind of plates have been determined. Coincidence up to the third decimal point in refractive index value (nf) was shown. Errors for the thickness of surface layer (df) is not more than 3 %. It is shown that the dielectric properties of microscopically rough layers of thickness ~10-45 nm can be accurately modeled in the homogeneous thin layer approximation. The thickness and origin of the surface layer on substrates are found out. Experimental data analysis allows to make some conclusions concerning the origin of this layer. It is a specific amorphous damaged layer that remains after taking out stressed surface layer via chemical polishing. The corrosion processes on glass ceramic seems to be very similar to those occurring on GGG and sapphire single crystals. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Origin of surface layer on common substrates for functional material films probed by ellipsometry Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Origin of surface layer on common substrates for functional material films probed by ellipsometry |
| spellingShingle |
Origin of surface layer on common substrates for functional material films probed by ellipsometry Belyaeva, A.I. Galuza, A.A. Kudlenko, A.D. |
| title_short |
Origin of surface layer on common substrates for functional material films probed by ellipsometry |
| title_full |
Origin of surface layer on common substrates for functional material films probed by ellipsometry |
| title_fullStr |
Origin of surface layer on common substrates for functional material films probed by ellipsometry |
| title_full_unstemmed |
Origin of surface layer on common substrates for functional material films probed by ellipsometry |
| title_sort |
origin of surface layer on common substrates for functional material films probed by ellipsometry |
| author |
Belyaeva, A.I. Galuza, A.A. Kudlenko, A.D. |
| author_facet |
Belyaeva, A.I. Galuza, A.A. Kudlenko, A.D. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
A multiple angle ellipsometric method is used to investigate thin film layers on common substrates (gadolinium gallium garnet-GGG, sapphire-Al₂O₃, and glass ceramic sitall) for functional material films. The method evaluates fundamental optical constants and thicknesses of the layers. Dielectric functions for the surface layers on such kind of plates have been determined. Coincidence up to the third decimal point in refractive index value (nf) was shown. Errors for the thickness of surface layer (df) is not more than 3 %. It is shown that the dielectric properties of microscopically rough layers of thickness ~10-45 nm can be accurately modeled in the homogeneous thin layer approximation. The thickness and origin of the surface layer on substrates are found out. Experimental data analysis allows to make some conclusions concerning the origin of this layer. It is a specific amorphous damaged layer that remains after taking out stressed surface layer via chemical polishing. The corrosion processes on glass ceramic seems to be very similar to those occurring on GGG and sapphire single crystals.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117962 |
| citation_txt |
Origin of surface layer on common substrates for functional material films probed by ellipsometry / A.I. Belyaeva, A.A. Galuza, A.D. Kudlenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 81-85. — Бібліогр.: 8 назв. — англ. |
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2025-12-07T19:27:16Z |
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2025-12-07T19:27:16Z |
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