Origin of surface layer on common substrates for functional material films probed by ellipsometry
A multiple angle ellipsometric method is used to investigate thin film layers on common substrates (gadolinium gallium garnet-GGG, sapphire-Al₂O₃, and glass ceramic sitall) for functional material films. The method evaluates fundamental optical constants and thicknesses of the layers. Dielectric fun...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2003 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117962 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Origin of surface layer on common substrates for functional material films probed by ellipsometry / A.I. Belyaeva, A.A. Galuza, A.D. Kudlenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 81-85. — Бібліогр.: 8 назв. — англ. |