About manifestation of the piezojunction effect in diode temperature sensors
An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. The compressive and tensile stresses (along the main crystallographic directi...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2003 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117973 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | About manifestation of the piezojunction effect in diode temperature sensors / V.L. Borblik,Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 97-101. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862535999193612288 |
|---|---|
| author | Borblik, V.L. Shwarts, Yu.M. Venger, E.F. |
| author_facet | Borblik, V.L. Shwarts, Yu.M. Venger, E.F. |
| citation_txt | About manifestation of the piezojunction effect in diode temperature sensors / V.L. Borblik,Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 97-101. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. The compressive and tensile stresses (along the main crystallographic directions), long- and short-base diodes, longitudinal and transverse effects have been considered.
It is shown that the three-subbands model results in even more nonlinear dependence of changes in the sensor readings on stress value (in comparison with the two-subbands model), holds minimality of the longitudinal piezojunction effect under stress orientation along the [100] direction and predicts substantially larger effect value for the strain perpendicular to the current through the diode.
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| first_indexed | 2025-11-24T10:13:45Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117973 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T10:13:45Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borblik, V.L. Shwarts, Yu.M. Venger, E.F. 2017-05-27T18:31:54Z 2017-05-27T18:31:54Z 2003 About manifestation of the piezojunction effect in diode temperature sensors / V.L. Borblik,Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 97-101. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 07.07.Df, 77.65.Ly, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/117973 An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. The compressive and tensile stresses (along the main crystallographic directions), long- and short-base diodes, longitudinal and transverse effects have been considered.
 It is shown that the three-subbands model results in even more nonlinear dependence of changes in the sensor readings on stress value (in comparison with the two-subbands model), holds minimality of the longitudinal piezojunction effect under stress orientation along the [100] direction and predicts substantially larger effect value for the strain perpendicular to the current through the diode. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics About manifestation of the piezojunction effect in diode temperature sensors Article published earlier |
| spellingShingle | About manifestation of the piezojunction effect in diode temperature sensors Borblik, V.L. Shwarts, Yu.M. Venger, E.F. |
| title | About manifestation of the piezojunction effect in diode temperature sensors |
| title_full | About manifestation of the piezojunction effect in diode temperature sensors |
| title_fullStr | About manifestation of the piezojunction effect in diode temperature sensors |
| title_full_unstemmed | About manifestation of the piezojunction effect in diode temperature sensors |
| title_short | About manifestation of the piezojunction effect in diode temperature sensors |
| title_sort | about manifestation of the piezojunction effect in diode temperature sensors |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117973 |
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