About manifestation of the piezojunction effect in diode temperature sensors
An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. The compressive and tensile stresses (along the main crystallographic directi...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117973 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | About manifestation of the piezojunction effect in diode temperature sensors / V.L. Borblik,Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 97-101. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117973 |
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Borblik, V.L. Shwarts, Yu.M. Venger, E.F. 2017-05-27T18:31:54Z 2017-05-27T18:31:54Z 2003 About manifestation of the piezojunction effect in diode temperature sensors / V.L. Borblik,Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 97-101. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 07.07.Df, 77.65.Ly, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/117973 An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. The compressive and tensile stresses (along the main crystallographic directions), long- and short-base diodes, longitudinal and transverse effects have been considered. It is shown that the three-subbands model results in even more nonlinear dependence of changes in the sensor readings on stress value (in comparison with the two-subbands model), holds minimality of the longitudinal piezojunction effect under stress orientation along the [100] direction and predicts substantially larger effect value for the strain perpendicular to the current through the diode. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics About manifestation of the piezojunction effect in diode temperature sensors Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
About manifestation of the piezojunction effect in diode temperature sensors |
| spellingShingle |
About manifestation of the piezojunction effect in diode temperature sensors Borblik, V.L. Shwarts, Yu.M. Venger, E.F. |
| title_short |
About manifestation of the piezojunction effect in diode temperature sensors |
| title_full |
About manifestation of the piezojunction effect in diode temperature sensors |
| title_fullStr |
About manifestation of the piezojunction effect in diode temperature sensors |
| title_full_unstemmed |
About manifestation of the piezojunction effect in diode temperature sensors |
| title_sort |
about manifestation of the piezojunction effect in diode temperature sensors |
| author |
Borblik, V.L. Shwarts, Yu.M. Venger, E.F. |
| author_facet |
Borblik, V.L. Shwarts, Yu.M. Venger, E.F. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. The compressive and tensile stresses (along the main crystallographic directions), long- and short-base diodes, longitudinal and transverse effects have been considered.
It is shown that the three-subbands model results in even more nonlinear dependence of changes in the sensor readings on stress value (in comparison with the two-subbands model), holds minimality of the longitudinal piezojunction effect under stress orientation along the [100] direction and predicts substantially larger effect value for the strain perpendicular to the current through the diode.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117973 |
| fulltext |
|
| citation_txt |
About manifestation of the piezojunction effect in diode temperature sensors / V.L. Borblik,Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 97-101. — Бібліогр.: 13 назв. — англ. |
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