About manifestation of the piezojunction effect in diode temperature sensors

An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. The compressive and tensile stresses (along the main crystallographic directi...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2003
Hauptverfasser: Borblik, V.L., Shwarts, Yu.M., Venger, E.F.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117973
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:About manifestation of the piezojunction effect in diode temperature sensors / V.L. Borblik,Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 97-101. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Borblik, V.L.
Shwarts, Yu.M.
Venger, E.F.
author_facet Borblik, V.L.
Shwarts, Yu.M.
Venger, E.F.
citation_txt About manifestation of the piezojunction effect in diode temperature sensors / V.L. Borblik,Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 97-101. — Бібліогр.: 13 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. The compressive and tensile stresses (along the main crystallographic directions), long- and short-base diodes, longitudinal and transverse effects have been considered.
 It is shown that the three-subbands model results in even more nonlinear dependence of changes in the sensor readings on stress value (in comparison with the two-subbands model), holds minimality of the longitudinal piezojunction effect under stress orientation along the [100] direction and predicts substantially larger effect value for the strain perpendicular to the current through the diode.
first_indexed 2025-11-24T10:13:45Z
format Article
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-24T10:13:45Z
publishDate 2003
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Borblik, V.L.
Shwarts, Yu.M.
Venger, E.F.
2017-05-27T18:31:54Z
2017-05-27T18:31:54Z
2003
About manifestation of the piezojunction effect in diode temperature sensors / V.L. Borblik,Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 97-101. — Бібліогр.: 13 назв. — англ.
1560-8034
PACS: 07.07.Df, 77.65.Ly, 85.30.Kk
https://nasplib.isofts.kiev.ua/handle/123456789/117973
An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. The compressive and tensile stresses (along the main crystallographic directions), long- and short-base diodes, longitudinal and transverse effects have been considered.
 It is shown that the three-subbands model results in even more nonlinear dependence of changes in the sensor readings on stress value (in comparison with the two-subbands model), holds minimality of the longitudinal piezojunction effect under stress orientation along the [100] direction and predicts substantially larger effect value for the strain perpendicular to the current through the diode.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
About manifestation of the piezojunction effect in diode temperature sensors
Article
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spellingShingle About manifestation of the piezojunction effect in diode temperature sensors
Borblik, V.L.
Shwarts, Yu.M.
Venger, E.F.
title About manifestation of the piezojunction effect in diode temperature sensors
title_full About manifestation of the piezojunction effect in diode temperature sensors
title_fullStr About manifestation of the piezojunction effect in diode temperature sensors
title_full_unstemmed About manifestation of the piezojunction effect in diode temperature sensors
title_short About manifestation of the piezojunction effect in diode temperature sensors
title_sort about manifestation of the piezojunction effect in diode temperature sensors
url https://nasplib.isofts.kiev.ua/handle/123456789/117973
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