About manifestation of the piezojunction effect in diode temperature sensors

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2003
• Main Authors: Borblik, V.L., Shwarts, Yu.M., Venger, E.F.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117973
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: About manifestation of the piezojunction effect in diode temperature sensors / V.L. Borblik,Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 97-101. — Бібліогр.: 13 назв. — англ.

An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. The compressive and tensile stresses (along the main crystallographic directi...