Buchumschlag

About manifestation of the piezojunction effect in diode temperature sensors

An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. The compressive and tensile stresses (along the main crystallographic directi...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2003
Hauptverfasser:	Borblik, V.L., Shwarts, Yu.M., Venger, E.F.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/117973
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	About manifestation of the piezojunction effect in diode temperature sensors / V.L. Borblik,Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 97-101. — Бібліогр.: 13 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

Ähnliche Einträge

Effect of mechanical stress on operation of diode temperature sensors
von: Borblik, V.L., et al.
Veröffentlicht: (2002)

Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region
von: Borblik, V.L., et al.
Veröffentlicht: (2007)

Self-consistent method for optimization of parameters of diode temperature sensors
von: Kulish, N.R., et al.
Veröffentlicht: (1999)

Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors
von: Shwarts, Yu.M., et al.
Veröffentlicht: (2003)

Effect of nonuniform doping profile on thermometric performance of diode temperature sensors
von: Sokolov, V.N., et al.
Veröffentlicht: (2002)

A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base
von: Borblik, V.L., et al.
Veröffentlicht: (2009)

Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown
von: Aleinikov, A.B., et al.
Veröffentlicht: (2012)

Smoothing cubic spline approximation of silicon diode temperature sensors thermometric characteristics
von: Ivashchenko, O.M., et al.
Veröffentlicht: (2010)

Smoothing cubic spline approximation of silicon diode temperature sensors thermometric characteristics
von: O. M. Ivashchenko, et al.
Veröffentlicht: (2010)

Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown
von: A. B. Aleinikov, et al.
Veröffentlicht: (2012)

Electrostatics of the nanowire radial -- diode
von: Borblik, V.L.
Veröffentlicht: (2019)

New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures
von: Borblik, V. L., et al.
Veröffentlicht: (2017)

Revealing the hopping mechanism of conduction in heavily doped silicon diodes
von: Borblik, V. L., et al.
Veröffentlicht: (2005)

New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
von: V. L. Borblik, et al.
Veröffentlicht: (2017)

Concerning the depletion width of a radial - junction and its influence on electrical properties of the diode
von: Borblik, V.L.
Veröffentlicht: (2017)

Electrostatics of the nanowire radial p-i-n diode
von: V. L. Borblik
Veröffentlicht: (2019)

Negative magnetoresistance of heavily doped silicon p-n junction
von: Borblik, V.L., et al.
Veröffentlicht: (2011)

Deformation-induced effects in indium antimonide microstructures at cryogenic temperatures for sensor applications
von: Druzhinin, A.O., et al.
Veröffentlicht: (2019)

Humidity Diode Sensors Based on 1D Nanosized Silicon Structures
von: Ya. O. Linevych, et al.
Veröffentlicht: (2024)

Concerning the depletion width of a radial p-n junction and its influence on electrical properties of the diode
von: V. L. Borblik
Veröffentlicht: (2017)

The effect of structure on the low-temperature electrical conductivity of carbon nanocomposite temperature sensors
von: V. V. Vajnberg, et al.
Veröffentlicht: (2019)

Biochemical passivation of metal surfaces for sensor application: reactive annealing of polycrystalline gold films in hydrogen sulfide atmosphere
von: Snopok, B. A., et al.
Veröffentlicht: (2000)

About peculiarities of the anisotropy of thermoelectric effects in semiconductors, connected with the specific manifestations of many valleys
von: P. I. Baranskyi, et al.
Veröffentlicht: (2012)

Deformation-induced effects in indium antimonide microstructures at cryogenic temperatures for sensor applications
von: A. O. Druzhinin, et al.
Veröffentlicht: (2019)

Method of low-temperature rise of laser diode quality
von: Kamuz, A.M., et al.
Veröffentlicht: (2002)

High stability temperature control of the laser diode for interferometry
von: Kosyak, I. V.
Veröffentlicht: (2016)

Influence of Temperature on Energy and Frequency Characteristics of mm-Waves Heterocathode Gunn Diodes
von: Arkusha, Yu. V., et al.
Veröffentlicht: (2013)

Simple pulse microwave waveguide calorimeter with temperature sensor LM 35
von: Linnik, A.F., et al.
Veröffentlicht: (2023)

Development of an Optical Temperature Sensor on Liquid Crystals
von: V. Y. Skosar, et al.
Veröffentlicht: (2023)

Manifestation of polaronic effects in Josephson currents
von: A. V. Parafilo, et al.
Veröffentlicht: (2013)

Effective polycrystalline sensor of ultraviolet radiation
von: Yu. Pavelets, et al.
Veröffentlicht: (2017)

Quantum-size effects in semiconductor heterosystems
von: Matveeva, L.A., et al.
Veröffentlicht: (2017)

Effective polycrystalline sensor of ultraviolet radiation
von: Pavelets, S.Yu., et al.
Veröffentlicht: (2017)

The impact of variable temperatures on the manifestation of certain biological features of the silkworm
von: Ju. V. Bondarenko, et al.
Veröffentlicht: (1998)

Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties
von: Borblik, V.L., et al.
Veröffentlicht: (2014)

Microwave detectors based on the spin-torque diode effect
von: O. V. Prokopenko, et al.
Veröffentlicht: (2015)

Features frequency conductivity of silicon sensor cryogenic temperatures
von: A. A. Druzhinin, et al.
Veröffentlicht: (2016)

Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
von: S. I. Vlasov, et al.
Veröffentlicht: (2010)

Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
von: Vlasov, S.I., et al.
Veröffentlicht: (2010)

Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals
von: Boltovets, N.S., et al.
Veröffentlicht: (2000)