Charge carrier generation in photosensitive amorphous molecular semiconductors

Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules...

Повний опис

Збережено в:
Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2003
Автор: Zabolotny, M.A.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117974
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Charge carrier generation in photosensitive amorphous molecular semiconductors / M.A. Zabolotny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 102-104. — Бібліогр.: 8 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117974
record_format dspace
spelling Zabolotny, M.A.
2017-05-27T18:32:30Z
2017-05-27T18:32:30Z
2003
Charge carrier generation in photosensitive amorphous molecular semiconductors / M.A. Zabolotny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 102-104. — Бібліогр.: 8 назв. — англ.
1560-8034
PACS: 71.35, 72.40, 72.80.1
https://nasplib.isofts.kiev.ua/handle/123456789/117974
Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules loses his surplus energy in the course of inelastic interaction with neighbouring atoms. The results of theoretical predictions are confirmed by the experimental ones obtained for a number of molecular semiconductors (anthracene, pentacene, PVC, PEPC).
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Charge carrier generation in photosensitive amorphous molecular semiconductors
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Charge carrier generation in photosensitive amorphous molecular semiconductors
spellingShingle Charge carrier generation in photosensitive amorphous molecular semiconductors
Zabolotny, M.A.
title_short Charge carrier generation in photosensitive amorphous molecular semiconductors
title_full Charge carrier generation in photosensitive amorphous molecular semiconductors
title_fullStr Charge carrier generation in photosensitive amorphous molecular semiconductors
title_full_unstemmed Charge carrier generation in photosensitive amorphous molecular semiconductors
title_sort charge carrier generation in photosensitive amorphous molecular semiconductors
author Zabolotny, M.A.
author_facet Zabolotny, M.A.
publishDate 2003
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules loses his surplus energy in the course of inelastic interaction with neighbouring atoms. The results of theoretical predictions are confirmed by the experimental ones obtained for a number of molecular semiconductors (anthracene, pentacene, PVC, PEPC).
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117974
citation_txt Charge carrier generation in photosensitive amorphous molecular semiconductors / M.A. Zabolotny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 102-104. — Бібліогр.: 8 назв. — англ.
work_keys_str_mv AT zabolotnyma chargecarriergenerationinphotosensitiveamorphousmolecularsemiconductors
first_indexed 2025-12-02T06:16:02Z
last_indexed 2025-12-02T06:16:02Z
_version_ 1850861765193105408