Charge carrier generation in photosensitive amorphous molecular semiconductors
Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117974 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Charge carrier generation in photosensitive amorphous molecular semiconductors / M.A. Zabolotny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 102-104. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117974 |
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Zabolotny, M.A. 2017-05-27T18:32:30Z 2017-05-27T18:32:30Z 2003 Charge carrier generation in photosensitive amorphous molecular semiconductors / M.A. Zabolotny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 102-104. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 71.35, 72.40, 72.80.1 https://nasplib.isofts.kiev.ua/handle/123456789/117974 Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules loses his surplus energy in the course of inelastic interaction with neighbouring atoms. The results of theoretical predictions are confirmed by the experimental ones obtained for a number of molecular semiconductors (anthracene, pentacene, PVC, PEPC). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Charge carrier generation in photosensitive amorphous molecular semiconductors Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Charge carrier generation in photosensitive amorphous molecular semiconductors |
| spellingShingle |
Charge carrier generation in photosensitive amorphous molecular semiconductors Zabolotny, M.A. |
| title_short |
Charge carrier generation in photosensitive amorphous molecular semiconductors |
| title_full |
Charge carrier generation in photosensitive amorphous molecular semiconductors |
| title_fullStr |
Charge carrier generation in photosensitive amorphous molecular semiconductors |
| title_full_unstemmed |
Charge carrier generation in photosensitive amorphous molecular semiconductors |
| title_sort |
charge carrier generation in photosensitive amorphous molecular semiconductors |
| author |
Zabolotny, M.A. |
| author_facet |
Zabolotny, M.A. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules loses his surplus energy in the course of inelastic interaction with neighbouring atoms. The results of theoretical predictions are confirmed by the experimental ones obtained for a number of molecular semiconductors (anthracene, pentacene, PVC, PEPC).
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117974 |
| citation_txt |
Charge carrier generation in photosensitive amorphous molecular semiconductors / M.A. Zabolotny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 102-104. — Бібліогр.: 8 назв. — англ. |
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AT zabolotnyma chargecarriergenerationinphotosensitiveamorphousmolecularsemiconductors |
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2025-12-02T06:16:02Z |
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2025-12-02T06:16:02Z |
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