Charge carrier generation in photosensitive amorphous molecular semiconductors
Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules...
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| Datum: | 2003 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117974 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Charge carrier generation in photosensitive amorphous molecular semiconductors / M.A. Zabolotny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 102-104. — Бібліогр.: 8 назв. — англ. |