Characterization of CdTe+Mn crystals depending on doping procedure

Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the initial manganese concentration and the doping procedure. Introduction of Mn i...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2003
Main Authors: Nikoniuk, E.S., Zakharuk, Z.I., Rarenko, I.M., Kuchma, M.I., Yurijchuk, I.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/117986
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Characterization of CdTe+Mn crystals depending on doping procedure / E.S. Nikoniuk, Z.I. Zakharuk, I.M. Rarenko, M.I. Kuchma, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 160-163. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117986
record_format dspace
spelling Nikoniuk, E.S.
Zakharuk, Z.I.
Rarenko, I.M.
Kuchma, M.I.
Yurijchuk, I.M.
2017-05-27T20:01:56Z
2017-05-27T20:01:56Z
2003
Characterization of CdTe+Mn crystals depending on doping procedure / E.S. Nikoniuk, Z.I. Zakharuk, I.M. Rarenko, M.I. Kuchma, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 160-163. — Бібліогр.: 7 назв. — англ.
1560-8034
PACS: 71.55.Gs; 72.20.Jv
https://nasplib.isofts.kiev.ua/handle/123456789/117986
Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the initial manganese concentration and the doping procedure. Introduction of Mn in above-stoichiometric limit in concentration of C₀ < 10¹⁹ cm⁻³ gives n-type crystals. When manganese concentration is of C₀ >= 10¹⁹ cm⁻³ electron conductivity is not observed so as in the Cd₁₋xMnxTe solid solution crystals. A model explaining this phenomenon is proposed. Although manganese impurity in the CdTe crystals doesn't reveal any electrical activity it provides a formation of above-stoichiometric cadmium in electrically active positions Cdi and as a component of precipitates. An influence of above-stoichiometric cadmium is determined both by manganese concentration and by doping schemes, as well as by annealing and cooling temperature conditions of the doped samples.
The financial support of the Science and Technology Center of Ukraine (grant #1440) is gratefully acknowledged.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Characterization of CdTe+Mn crystals depending on doping procedure
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Characterization of CdTe+Mn crystals depending on doping procedure
spellingShingle Characterization of CdTe+Mn crystals depending on doping procedure
Nikoniuk, E.S.
Zakharuk, Z.I.
Rarenko, I.M.
Kuchma, M.I.
Yurijchuk, I.M.
title_short Characterization of CdTe+Mn crystals depending on doping procedure
title_full Characterization of CdTe+Mn crystals depending on doping procedure
title_fullStr Characterization of CdTe+Mn crystals depending on doping procedure
title_full_unstemmed Characterization of CdTe+Mn crystals depending on doping procedure
title_sort characterization of cdte+mn crystals depending on doping procedure
author Nikoniuk, E.S.
Zakharuk, Z.I.
Rarenko, I.M.
Kuchma, M.I.
Yurijchuk, I.M.
author_facet Nikoniuk, E.S.
Zakharuk, Z.I.
Rarenko, I.M.
Kuchma, M.I.
Yurijchuk, I.M.
publishDate 2003
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the initial manganese concentration and the doping procedure. Introduction of Mn in above-stoichiometric limit in concentration of C₀ < 10¹⁹ cm⁻³ gives n-type crystals. When manganese concentration is of C₀ >= 10¹⁹ cm⁻³ electron conductivity is not observed so as in the Cd₁₋xMnxTe solid solution crystals. A model explaining this phenomenon is proposed. Although manganese impurity in the CdTe crystals doesn't reveal any electrical activity it provides a formation of above-stoichiometric cadmium in electrically active positions Cdi and as a component of precipitates. An influence of above-stoichiometric cadmium is determined both by manganese concentration and by doping schemes, as well as by annealing and cooling temperature conditions of the doped samples.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117986
citation_txt Characterization of CdTe+Mn crystals depending on doping procedure / E.S. Nikoniuk, Z.I. Zakharuk, I.M. Rarenko, M.I. Kuchma, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 160-163. — Бібліогр.: 7 назв. — англ.
work_keys_str_mv AT nikoniukes characterizationofcdtemncrystalsdependingondopingprocedure
AT zakharukzi characterizationofcdtemncrystalsdependingondopingprocedure
AT rarenkoim characterizationofcdtemncrystalsdependingondopingprocedure
AT kuchmami characterizationofcdtemncrystalsdependingondopingprocedure
AT yurijchukim characterizationofcdtemncrystalsdependingondopingprocedure
first_indexed 2025-12-07T18:43:11Z
last_indexed 2025-12-07T18:43:11Z
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