Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon
Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects in n-Si(P) crystals doped by neutron irradiation and doped at growth were st...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2003 |
| Main Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117987 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon / Yu.P. Dotsenko, V.M. Ermakov, A.E Gorin, V.I. Khivrych, V.V. Kolomoets, V.F. Machulin, L.I. Panasjuk, I.V. Prokopenko, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 111-114. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862729737566158848 |
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| author | Dotsenko, Yu.P. Ermakov, V.M. Gorin, A.E. Khivrych, V.I. Kolomoets, V.V. Machulin, V.F. Panasjuk, L.I. Prokopenko, I.V. Sus', B.B. Venger, E.F. |
| author_facet | Dotsenko, Yu.P. Ermakov, V.M. Gorin, A.E. Khivrych, V.I. Kolomoets, V.V. Machulin, V.F. Panasjuk, L.I. Prokopenko, I.V. Sus', B.B. Venger, E.F. |
| citation_txt | Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon / Yu.P. Dotsenko, V.M. Ermakov, A.E Gorin, V.I. Khivrych, V.V. Kolomoets, V.F. Machulin, L.I. Panasjuk, I.V. Prokopenko, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 111-114. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects in n-Si(P) crystals doped by neutron irradiation and doped at growth were studied by the tensoeffects measurements and by analysis of the pressure dependencies of the electron concentration ratio in "upper" and "lower" L1-valleys of uniaxially strained samples. Comparison of the some parameters for the crystals doped either by neutron transmutation method or in the melt is carried out.
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| first_indexed | 2025-12-07T19:16:03Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-117987 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:16:03Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Dotsenko, Yu.P. Ermakov, V.M. Gorin, A.E. Khivrych, V.I. Kolomoets, V.V. Machulin, V.F. Panasjuk, L.I. Prokopenko, I.V. Sus', B.B. Venger, E.F. 2017-05-27T20:02:34Z 2017-05-27T20:02:34Z 2003 Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon / Yu.P. Dotsenko, V.M. Ermakov, A.E Gorin, V.I. Khivrych, V.V. Kolomoets, V.F. Machulin, L.I. Panasjuk, I.V. Prokopenko, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 111-114. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 61.72.Tt, 61.80.-x https://nasplib.isofts.kiev.ua/handle/123456789/117987 Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects in n-Si(P) crystals doped by neutron irradiation and doped at growth were studied by the tensoeffects measurements and by analysis of the pressure dependencies of the electron concentration ratio in "upper" and "lower" L1-valleys of uniaxially strained samples. Comparison of the some parameters for the crystals doped either by neutron transmutation method or in the melt is carried out. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon Article published earlier |
| spellingShingle | Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon Dotsenko, Yu.P. Ermakov, V.M. Gorin, A.E. Khivrych, V.I. Kolomoets, V.V. Machulin, V.F. Panasjuk, L.I. Prokopenko, I.V. Sus', B.B. Venger, E.F. |
| title | Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon |
| title_full | Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon |
| title_fullStr | Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon |
| title_full_unstemmed | Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon |
| title_short | Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon |
| title_sort | thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117987 |
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