Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon

Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon

Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects in n-Si(P) crystals doped by neutron irradiation and doped at growth were st...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2003
Hauptverfasser: Dotsenko, Yu.P., Ermakov, V.M., Gorin, A.E., Khivrych, V.I., Kolomoets, V.V., Machulin, V.F., Panasjuk, L.I., Prokopenko, I.V., Sus', B.B., Venger, E.F.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117987
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Zitieren:Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon / Yu.P. Dotsenko, V.M. Ermakov, A.E Gorin, V.I. Khivrych, V.V. Kolomoets, V.F. Machulin, L.I. Panasjuk, I.V. Prokopenko, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 111-114. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117987
record_format dspace
spelling Dotsenko, Yu.P.
Ermakov, V.M.
Gorin, A.E.
Khivrych, V.I.
Kolomoets, V.V.
Machulin, V.F.
Panasjuk, L.I.
Prokopenko, I.V.
Sus', B.B.
Venger, E.F.
2017-05-27T20:02:34Z
2017-05-27T20:02:34Z
2003
Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon / Yu.P. Dotsenko, V.M. Ermakov, A.E Gorin, V.I. Khivrych, V.V. Kolomoets, V.F. Machulin, L.I. Panasjuk, I.V. Prokopenko, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 111-114. — Бібліогр.: 9 назв. — англ.
1560-8034
PACS: 61.72.Tt, 61.80.-x
https://nasplib.isofts.kiev.ua/handle/123456789/117987
Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects in n-Si(P) crystals doped by neutron irradiation and doped at growth were studied by the tensoeffects measurements and by analysis of the pressure dependencies of the electron concentration ratio in "upper" and "lower" L1-valleys of uniaxially strained samples. Comparison of the some parameters for the crystals doped either by neutron transmutation method or in the melt is carried out.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon
spellingShingle Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon
Dotsenko, Yu.P.
Ermakov, V.M.
Gorin, A.E.
Khivrych, V.I.
Kolomoets, V.V.
Machulin, V.F.
Panasjuk, L.I.
Prokopenko, I.V.
Sus', B.B.
Venger, E.F.
title_short Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon
title_full Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon
title_fullStr Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon
title_full_unstemmed Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon
title_sort thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon
author Dotsenko, Yu.P.
Ermakov, V.M.
Gorin, A.E.
Khivrych, V.I.
Kolomoets, V.V.
Machulin, V.F.
Panasjuk, L.I.
Prokopenko, I.V.
Sus', B.B.
Venger, E.F.
author_facet Dotsenko, Yu.P.
Ermakov, V.M.
Gorin, A.E.
Khivrych, V.I.
Kolomoets, V.V.
Machulin, V.F.
Panasjuk, L.I.
Prokopenko, I.V.
Sus', B.B.
Venger, E.F.
publishDate 2003
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects in n-Si(P) crystals doped by neutron irradiation and doped at growth were studied by the tensoeffects measurements and by analysis of the pressure dependencies of the electron concentration ratio in "upper" and "lower" L1-valleys of uniaxially strained samples. Comparison of the some parameters for the crystals doped either by neutron transmutation method or in the melt is carried out.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117987
citation_txt Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon / Yu.P. Dotsenko, V.M. Ermakov, A.E Gorin, V.I. Khivrych, V.V. Kolomoets, V.F. Machulin, L.I. Panasjuk, I.V. Prokopenko, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 111-114. — Бібліогр.: 9 назв. — англ.
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first_indexed 2025-12-07T19:16:03Z
last_indexed 2025-12-07T19:16:03Z
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