Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition

Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2003
Автори: Glinchuk, K.D., Litovchenko, N.M., Strilchuk, O.N.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117989
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 121-128. — Бібліогр.: 34 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Glinchuk, K.D.
Litovchenko, N.M.
Strilchuk, O.N.
author_facet Glinchuk, K.D.
Litovchenko, N.M.
Strilchuk, O.N.
citation_txt Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 121-128. — Бібліогр.: 34 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of the method discussed enables to obtain reliable x values.
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language English
last_indexed 2025-12-07T15:15:10Z
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publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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spelling Glinchuk, K.D.
Litovchenko, N.M.
Strilchuk, O.N.
2017-05-27T20:04:42Z
2017-05-27T20:04:42Z
2003
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 121-128. — Бібліогр.: 34 назв. — англ.
1560-8034
PACS: 78.55. - m; 78.55. Et
https://nasplib.isofts.kiev.ua/handle/123456789/117989
Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of the method discussed enables to obtain reliable x values.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition
Article
published earlier
spellingShingle Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition
Glinchuk, K.D.
Litovchenko, N.M.
Strilchuk, O.N.
title Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition
title_full Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition
title_fullStr Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition
title_full_unstemmed Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition
title_short Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition
title_sort analysis of luminescence method applicability for determination of cd₁₋xznxte composition
url https://nasplib.isofts.kiev.ua/handle/123456789/117989
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