Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition
Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2003 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117989 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 121-128. — Бібліогр.: 34 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117989 |
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Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. 2017-05-27T20:04:42Z 2017-05-27T20:04:42Z 2003 Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 121-128. — Бібліогр.: 34 назв. — англ. 1560-8034 PACS: 78.55. - m; 78.55. Et https://nasplib.isofts.kiev.ua/handle/123456789/117989 Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of the method discussed enables to obtain reliable x values. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| spellingShingle |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| title_short |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| title_full |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| title_fullStr |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| title_full_unstemmed |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| title_sort |
analysis of luminescence method applicability for determination of cd₁₋xznxte composition |
| author |
Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| author_facet |
Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of the method discussed enables to obtain reliable x values.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117989 |
| citation_txt |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 121-128. — Бібліогр.: 34 назв. — англ. |
| work_keys_str_mv |
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| first_indexed |
2025-12-07T15:15:10Z |
| last_indexed |
2025-12-07T15:15:10Z |
| _version_ |
1850863004682289152 |