Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition
Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2003 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117989 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 121-128. — Бібліогр.: 34 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862664566320660480 |
|---|---|
| author | Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| author_facet | Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| citation_txt | Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 121-128. — Бібліогр.: 34 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of the method discussed enables to obtain reliable x values.
|
| first_indexed | 2025-12-07T15:15:10Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117989 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:15:10Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. 2017-05-27T20:04:42Z 2017-05-27T20:04:42Z 2003 Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 121-128. — Бібліогр.: 34 назв. — англ. 1560-8034 PACS: 78.55. - m; 78.55. Et https://nasplib.isofts.kiev.ua/handle/123456789/117989 Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of the method discussed enables to obtain reliable x values. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition Article published earlier |
| spellingShingle | Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| title | Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| title_full | Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| title_fullStr | Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| title_full_unstemmed | Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| title_short | Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| title_sort | analysis of luminescence method applicability for determination of cd₁₋xznxte composition |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117989 |
| work_keys_str_mv | AT glinchukkd analysisofluminescencemethodapplicabilityfordeterminationofcd1xznxtecomposition AT litovchenkonm analysisofluminescencemethodapplicabilityfordeterminationofcd1xznxtecomposition AT strilchukon analysisofluminescencemethodapplicabilityfordeterminationofcd1xznxtecomposition |