Ion induced field effect in silicon in nematic liquid crystal cell
An influence of ion charge on surface conductivity of silicon in In₂O₃/5CB/monocrystal silicon/Al structure, in which a specific resistance of silicon is much less than a specific resistance of liquid crystal layer, was studied. Within the frequency range of 103-106 Hz of external voltage, a depleti...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117991 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Ion induced field effect in silicon in nematic liquid crystal cell / M.I. Gritsenko, S.I. Kucheev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 129-133. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862741509845024768 |
|---|---|
| author | Kucheev, S.I. Gritsenko, M.I. |
| author_facet | Kucheev, S.I. Gritsenko, M.I. |
| citation_txt | Ion induced field effect in silicon in nematic liquid crystal cell / M.I. Gritsenko, S.I. Kucheev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 129-133. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | An influence of ion charge on surface conductivity of silicon in In₂O₃/5CB/monocrystal silicon/Al structure, in which a specific resistance of silicon is much less than a specific resistance of liquid crystal layer, was studied. Within the frequency range of 103-106 Hz of external voltage, a depletion state in silicon has been observed. We found that the field effect in silicon is induced by ion charges localized near silicon surface. It is shown that method based on visualization of n+ pockets on n-Si substrate by liquid crystal enables to estimate the impurity ion density near silicon surface. Analysis of the field effect induced by polarized charges formed by the prior action of DC voltage has allowed us to conclude that: 1) up to several volts of DC, a charge injection from silicon surface into liquid crystal is absent; 2) ion charge accumulated near silicon surface is partially adsorbed on silicon surface; 3) high voltage with "+" U polarity on silicon causes full absence of photosensitivity. We demonstrated that such type of structure could be used as liquid crystal spatial light modulator.
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| first_indexed | 2025-12-07T20:20:13Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117991 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:20:13Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kucheev, S.I. Gritsenko, M.I. 2017-05-27T20:06:34Z 2017-05-27T20:06:34Z 2003 Ion induced field effect in silicon in nematic liquid crystal cell / M.I. Gritsenko, S.I. Kucheev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 129-133. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 77.84.Nh https://nasplib.isofts.kiev.ua/handle/123456789/117991 An influence of ion charge on surface conductivity of silicon in In₂O₃/5CB/monocrystal silicon/Al structure, in which a specific resistance of silicon is much less than a specific resistance of liquid crystal layer, was studied. Within the frequency range of 103-106 Hz of external voltage, a depletion state in silicon has been observed. We found that the field effect in silicon is induced by ion charges localized near silicon surface. It is shown that method based on visualization of n+ pockets on n-Si substrate by liquid crystal enables to estimate the impurity ion density near silicon surface. Analysis of the field effect induced by polarized charges formed by the prior action of DC voltage has allowed us to conclude that: 1) up to several volts of DC, a charge injection from silicon surface into liquid crystal is absent; 2) ion charge accumulated near silicon surface is partially adsorbed on silicon surface; 3) high voltage with "+" U polarity on silicon causes full absence of photosensitivity. We demonstrated that such type of structure could be used as liquid crystal spatial light modulator. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Ion induced field effect in silicon in nematic liquid crystal cell Article published earlier |
| spellingShingle | Ion induced field effect in silicon in nematic liquid crystal cell Kucheev, S.I. Gritsenko, M.I. |
| title | Ion induced field effect in silicon in nematic liquid crystal cell |
| title_full | Ion induced field effect in silicon in nematic liquid crystal cell |
| title_fullStr | Ion induced field effect in silicon in nematic liquid crystal cell |
| title_full_unstemmed | Ion induced field effect in silicon in nematic liquid crystal cell |
| title_short | Ion induced field effect in silicon in nematic liquid crystal cell |
| title_sort | ion induced field effect in silicon in nematic liquid crystal cell |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117991 |
| work_keys_str_mv | AT kucheevsi ioninducedfieldeffectinsiliconinnematicliquidcrystalcell AT gritsenkomi ioninducedfieldeffectinsiliconinnematicliquidcrystalcell |