Ion induced field effect in silicon in nematic liquid crystal cell

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2003
• Main Authors: Kucheev, S.I., Gritsenko, M.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117991
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Ion induced field effect in silicon in nematic liquid crystal cell / M.I. Gritsenko, S.I. Kucheev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 129-133. — Бібліогр.: 10 назв. — англ.

An influence of ion charge on surface conductivity of silicon in In₂O₃/5CB/monocrystal silicon/Al structure, in which a specific resistance of silicon is much less than a specific resistance of liquid crystal layer, was studied. Within the frequency range of 103-106 Hz of external voltage, a depleti...