Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2003
• Hauptverfasser: Gentsar, P.A., Matveeva, L.A., Kudryavtsev, A.A., Venger, E.F.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117992
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium / P.A. Gentsar, L.A. Matveeva, A.A. Kudryavtsev, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 141-146. — Бібліогр.: 16 назв. — англ.

Electroreflectance spectra of chemically etched (110) surface of intrinsic germanium are measured in the range of E₁, E₁ + Δ₁ transitions for ||[100] and ||[10] directions of the polarization vector. Separated are isotropic (surface) and anisotropic (bulk) electroreflectance components. The spectrum...