On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃
 Schottky barrier diodes, in which the space-charge region width is much over the de
 Broglie wavelength in GaN. An analysis of the temperature dependences of the I−V
 curves of forward-biased Schottky barr...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2007 |
| Автори: | , , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117993 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes / A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Klad'ko, R.V. Konakova, Ya.Ya. Kudruk, A.V. Kuchuk, V.V. Milenin, Yu.N. Sveshnikov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 1-5. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862695464118255616 |
|---|---|
| author | Belyaev, A.E. Boltovets, N.S. Ivanov, V.N. Klad’ko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Kuchuk, A.V. Milenin, V.V. Sveshnikov, Yu.N. Sheremet, V.N. |
| author_facet | Belyaev, A.E. Boltovets, N.S. Ivanov, V.N. Klad’ko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Kuchuk, A.V. Milenin, V.V. Sveshnikov, Yu.N. Sheremet, V.N. |
| citation_txt | On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes / A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Klad'ko, R.V. Konakova, Ya.Ya. Kudruk, A.V. Kuchuk, V.V. Milenin, Yu.N. Sveshnikov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 1-5. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃
Schottky barrier diodes, in which the space-charge region width is much over the de
Broglie wavelength in GaN. An analysis of the temperature dependences of the I−V
curves of forward-biased Schottky barriers showed that, in the temperature range
80−380 K, the current flow occurs as a tunneling one along dislocations crossing the
space-charge region. The dislocation density ρ estimated from the I−V curves (in
accordance with the model of tunneling along the dislocation line) was ≈ 1.7×10⁷ cm⁻².
This value is close to that obtained with x-ray diffraction technique
|
| first_indexed | 2025-12-07T16:24:32Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117993 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:24:32Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Belyaev, A.E. Boltovets, N.S. Ivanov, V.N. Klad’ko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Kuchuk, A.V. Milenin, V.V. Sveshnikov, Yu.N. Sheremet, V.N. 2017-05-27T20:09:23Z 2017-05-27T20:09:23Z 2007 On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes / A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Klad'ko, R.V. Konakova, Ya.Ya. Kudruk, A.V. Kuchuk, V.V. Milenin, Yu.N. Sveshnikov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 1-5. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 61.72.Lk, 61.72.Vv, 73.40.Gk, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/117993 We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃
 Schottky barrier diodes, in which the space-charge region width is much over the de
 Broglie wavelength in GaN. An analysis of the temperature dependences of the I−V
 curves of forward-biased Schottky barriers showed that, in the temperature range
 80−380 K, the current flow occurs as a tunneling one along dislocations crossing the
 space-charge region. The dislocation density ρ estimated from the I−V curves (in
 accordance with the model of tunneling along the dislocation line) was ≈ 1.7×10⁷ cm⁻².
 This value is close to that obtained with x-ray diffraction technique en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes Article published earlier |
| spellingShingle | On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes Belyaev, A.E. Boltovets, N.S. Ivanov, V.N. Klad’ko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Kuchuk, A.V. Milenin, V.V. Sveshnikov, Yu.N. Sheremet, V.N. |
| title | On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes |
| title_full | On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes |
| title_fullStr | On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes |
| title_full_unstemmed | On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes |
| title_short | On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes |
| title_sort | on the current flow mechanism in the au-tibx-n-gan-i-al₂o₃ schottky barrier diodes |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117993 |
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