Electron energy spectrum in a spherical quantum dot with smooth confinement

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2007
• Автори: Holovatsky, V., Voitsekhivska, O., Gutsul, V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/117995
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Electron energy spectrum in a spherical quantum dot with smooth confinement / V. Holovatsky, O. Voitsekhivska, V. Gutsul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 10-16. — Бібліогр.: 9 назв. — англ.

The electron energy spectrum in a quantum dot (QD) with smooth
 dependences of the quasiparticle potential energy and the effective mass at the interface
 between semiconductor media is calculated in the effective mass approximation. It is
 shown that the electron energy corrections due to the tailing of the interface are
 nonmonotonous functions of the QD radius, the increasing of which brings to the rapid
 increasing of shifts, reaching their maxima, and slowly decreasing for the QDs of big
 sizes. The calculations prove that the relative corrections for the different electron energy
 levels in a spherical QD are placed closer to each other with increase in the radius. The
 growth of the parameter of interface tailing leads to the proportional increase in the
 corrections to electron energy spectra. Numerical calculations are performed for
 HgS/CdS and GaAs/AlxGa₁₋xAs QDs, all dependences being qualitatively similar.