Electron energy spectrum in a spherical quantum dot with smooth confinement
The electron energy spectrum in a quantum dot (QD) with smooth
 dependences of the quasiparticle potential energy and the effective mass at the interface
 between semiconductor media is calculated in the effective mass approximation. It is
 shown that the electron energy corr...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2007 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117995 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electron energy spectrum in a spherical quantum dot with smooth confinement / V. Holovatsky, O. Voitsekhivska, V. Gutsul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 10-16. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862641849816055808 |
|---|---|
| author | Holovatsky, V. Voitsekhivska, O. Gutsul, V. |
| author_facet | Holovatsky, V. Voitsekhivska, O. Gutsul, V. |
| citation_txt | Electron energy spectrum in a spherical quantum dot with smooth confinement / V. Holovatsky, O. Voitsekhivska, V. Gutsul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 10-16. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The electron energy spectrum in a quantum dot (QD) with smooth
dependences of the quasiparticle potential energy and the effective mass at the interface
between semiconductor media is calculated in the effective mass approximation. It is
shown that the electron energy corrections due to the tailing of the interface are
nonmonotonous functions of the QD radius, the increasing of which brings to the rapid
increasing of shifts, reaching their maxima, and slowly decreasing for the QDs of big
sizes. The calculations prove that the relative corrections for the different electron energy
levels in a spherical QD are placed closer to each other with increase in the radius. The
growth of the parameter of interface tailing leads to the proportional increase in the
corrections to electron energy spectra. Numerical calculations are performed for
HgS/CdS and GaAs/AlxGa₁₋xAs QDs, all dependences being qualitatively similar.
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| first_indexed | 2025-12-01T04:37:11Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117995 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T04:37:11Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Holovatsky, V. Voitsekhivska, O. Gutsul, V. 2017-05-27T20:10:43Z 2017-05-27T20:10:43Z 2007 Electron energy spectrum in a spherical quantum dot with smooth confinement / V. Holovatsky, O. Voitsekhivska, V. Gutsul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 10-16. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 68.35.-p, 71.18.+y, 73.21.La https://nasplib.isofts.kiev.ua/handle/123456789/117995 The electron energy spectrum in a quantum dot (QD) with smooth
 dependences of the quasiparticle potential energy and the effective mass at the interface
 between semiconductor media is calculated in the effective mass approximation. It is
 shown that the electron energy corrections due to the tailing of the interface are
 nonmonotonous functions of the QD radius, the increasing of which brings to the rapid
 increasing of shifts, reaching their maxima, and slowly decreasing for the QDs of big
 sizes. The calculations prove that the relative corrections for the different electron energy
 levels in a spherical QD are placed closer to each other with increase in the radius. The
 growth of the parameter of interface tailing leads to the proportional increase in the
 corrections to electron energy spectra. Numerical calculations are performed for
 HgS/CdS and GaAs/AlxGa₁₋xAs QDs, all dependences being qualitatively similar. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electron energy spectrum in a spherical quantum dot with smooth confinement Article published earlier |
| spellingShingle | Electron energy spectrum in a spherical quantum dot with smooth confinement Holovatsky, V. Voitsekhivska, O. Gutsul, V. |
| title | Electron energy spectrum in a spherical quantum dot with smooth confinement |
| title_full | Electron energy spectrum in a spherical quantum dot with smooth confinement |
| title_fullStr | Electron energy spectrum in a spherical quantum dot with smooth confinement |
| title_full_unstemmed | Electron energy spectrum in a spherical quantum dot with smooth confinement |
| title_short | Electron energy spectrum in a spherical quantum dot with smooth confinement |
| title_sort | electron energy spectrum in a spherical quantum dot with smooth confinement |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117995 |
| work_keys_str_mv | AT holovatskyv electronenergyspectruminasphericalquantumdotwithsmoothconfinement AT voitsekhivskao electronenergyspectruminasphericalquantumdotwithsmoothconfinement AT gutsulv electronenergyspectruminasphericalquantumdotwithsmoothconfinement |