Electron energy spectrum in a spherical quantum dot with smooth confinement

The electron energy spectrum in a quantum dot (QD) with smooth dependences of the quasiparticle potential energy and the effective mass at the interface between semiconductor media is calculated in the effective mass approximation. It is shown that the electron energy corrections due to the taili...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2007
Автори: Holovatsky, V., Voitsekhivska, O., Gutsul, V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117995
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Electron energy spectrum in a spherical quantum dot with smooth confinement / V. Holovatsky, O. Voitsekhivska, V. Gutsul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 10-16. — Бібліогр.: 9 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117995
record_format dspace
spelling Holovatsky, V.
Voitsekhivska, O.
Gutsul, V.
2017-05-27T20:10:43Z
2017-05-27T20:10:43Z
2007
Electron energy spectrum in a spherical quantum dot with smooth confinement / V. Holovatsky, O. Voitsekhivska, V. Gutsul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 10-16. — Бібліогр.: 9 назв. — англ.
1560-8034
PACS 68.35.-p, 71.18.+y, 73.21.La
https://nasplib.isofts.kiev.ua/handle/123456789/117995
The electron energy spectrum in a quantum dot (QD) with smooth dependences of the quasiparticle potential energy and the effective mass at the interface between semiconductor media is calculated in the effective mass approximation. It is shown that the electron energy corrections due to the tailing of the interface are nonmonotonous functions of the QD radius, the increasing of which brings to the rapid increasing of shifts, reaching their maxima, and slowly decreasing for the QDs of big sizes. The calculations prove that the relative corrections for the different electron energy levels in a spherical QD are placed closer to each other with increase in the radius. The growth of the parameter of interface tailing leads to the proportional increase in the corrections to electron energy spectra. Numerical calculations are performed for HgS/CdS and GaAs/AlxGa₁₋xAs QDs, all dependences being qualitatively similar.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Electron energy spectrum in a spherical quantum dot with smooth confinement
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Electron energy spectrum in a spherical quantum dot with smooth confinement
spellingShingle Electron energy spectrum in a spherical quantum dot with smooth confinement
Holovatsky, V.
Voitsekhivska, O.
Gutsul, V.
title_short Electron energy spectrum in a spherical quantum dot with smooth confinement
title_full Electron energy spectrum in a spherical quantum dot with smooth confinement
title_fullStr Electron energy spectrum in a spherical quantum dot with smooth confinement
title_full_unstemmed Electron energy spectrum in a spherical quantum dot with smooth confinement
title_sort electron energy spectrum in a spherical quantum dot with smooth confinement
author Holovatsky, V.
Voitsekhivska, O.
Gutsul, V.
author_facet Holovatsky, V.
Voitsekhivska, O.
Gutsul, V.
publishDate 2007
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The electron energy spectrum in a quantum dot (QD) with smooth dependences of the quasiparticle potential energy and the effective mass at the interface between semiconductor media is calculated in the effective mass approximation. It is shown that the electron energy corrections due to the tailing of the interface are nonmonotonous functions of the QD radius, the increasing of which brings to the rapid increasing of shifts, reaching their maxima, and slowly decreasing for the QDs of big sizes. The calculations prove that the relative corrections for the different electron energy levels in a spherical QD are placed closer to each other with increase in the radius. The growth of the parameter of interface tailing leads to the proportional increase in the corrections to electron energy spectra. Numerical calculations are performed for HgS/CdS and GaAs/AlxGa₁₋xAs QDs, all dependences being qualitatively similar.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117995
citation_txt Electron energy spectrum in a spherical quantum dot with smooth confinement / V. Holovatsky, O. Voitsekhivska, V. Gutsul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 10-16. — Бібліогр.: 9 назв. — англ.
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AT voitsekhivskao electronenergyspectruminasphericalquantumdotwithsmoothconfinement
AT gutsulv electronenergyspectruminasphericalquantumdotwithsmoothconfinement
first_indexed 2025-12-01T04:37:11Z
last_indexed 2025-12-01T04:37:11Z
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