Electron energy spectrum in a spherical quantum dot with smooth confinement

The electron energy spectrum in a quantum dot (QD) with smooth
 dependences of the quasiparticle potential energy and the effective mass at the interface
 between semiconductor media is calculated in the effective mass approximation. It is
 shown that the electron energy corr...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2007
Main Authors: Holovatsky, V., Voitsekhivska, O., Gutsul, V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/117995
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Electron energy spectrum in a spherical quantum dot with smooth confinement / V. Holovatsky, O. Voitsekhivska, V. Gutsul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 10-16. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862641849816055808
author Holovatsky, V.
Voitsekhivska, O.
Gutsul, V.
author_facet Holovatsky, V.
Voitsekhivska, O.
Gutsul, V.
citation_txt Electron energy spectrum in a spherical quantum dot with smooth confinement / V. Holovatsky, O. Voitsekhivska, V. Gutsul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 10-16. — Бібліогр.: 9 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The electron energy spectrum in a quantum dot (QD) with smooth
 dependences of the quasiparticle potential energy and the effective mass at the interface
 between semiconductor media is calculated in the effective mass approximation. It is
 shown that the electron energy corrections due to the tailing of the interface are
 nonmonotonous functions of the QD radius, the increasing of which brings to the rapid
 increasing of shifts, reaching their maxima, and slowly decreasing for the QDs of big
 sizes. The calculations prove that the relative corrections for the different electron energy
 levels in a spherical QD are placed closer to each other with increase in the radius. The
 growth of the parameter of interface tailing leads to the proportional increase in the
 corrections to electron energy spectra. Numerical calculations are performed for
 HgS/CdS and GaAs/AlxGa₁₋xAs QDs, all dependences being qualitatively similar.
first_indexed 2025-12-01T04:37:11Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-117995
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-01T04:37:11Z
publishDate 2007
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Holovatsky, V.
Voitsekhivska, O.
Gutsul, V.
2017-05-27T20:10:43Z
2017-05-27T20:10:43Z
2007
Electron energy spectrum in a spherical quantum dot with smooth confinement / V. Holovatsky, O. Voitsekhivska, V. Gutsul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 10-16. — Бібліогр.: 9 назв. — англ.
1560-8034
PACS 68.35.-p, 71.18.+y, 73.21.La
https://nasplib.isofts.kiev.ua/handle/123456789/117995
The electron energy spectrum in a quantum dot (QD) with smooth
 dependences of the quasiparticle potential energy and the effective mass at the interface
 between semiconductor media is calculated in the effective mass approximation. It is
 shown that the electron energy corrections due to the tailing of the interface are
 nonmonotonous functions of the QD radius, the increasing of which brings to the rapid
 increasing of shifts, reaching their maxima, and slowly decreasing for the QDs of big
 sizes. The calculations prove that the relative corrections for the different electron energy
 levels in a spherical QD are placed closer to each other with increase in the radius. The
 growth of the parameter of interface tailing leads to the proportional increase in the
 corrections to electron energy spectra. Numerical calculations are performed for
 HgS/CdS and GaAs/AlxGa₁₋xAs QDs, all dependences being qualitatively similar.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Electron energy spectrum in a spherical quantum dot with smooth confinement
Article
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spellingShingle Electron energy spectrum in a spherical quantum dot with smooth confinement
Holovatsky, V.
Voitsekhivska, O.
Gutsul, V.
title Electron energy spectrum in a spherical quantum dot with smooth confinement
title_full Electron energy spectrum in a spherical quantum dot with smooth confinement
title_fullStr Electron energy spectrum in a spherical quantum dot with smooth confinement
title_full_unstemmed Electron energy spectrum in a spherical quantum dot with smooth confinement
title_short Electron energy spectrum in a spherical quantum dot with smooth confinement
title_sort electron energy spectrum in a spherical quantum dot with smooth confinement
url https://nasplib.isofts.kiev.ua/handle/123456789/117995
work_keys_str_mv AT holovatskyv electronenergyspectruminasphericalquantumdotwithsmoothconfinement
AT voitsekhivskao electronenergyspectruminasphericalquantumdotwithsmoothconfinement
AT gutsulv electronenergyspectruminasphericalquantumdotwithsmoothconfinement