Calculation of the spectra of characteristic electron losses in indium bromide
For the first time, the fundamental optical functions of single crystals of layered indium bromide are calculated on the basis of polarization-dependent reflection spectra at the liquid helium temperature in the energy region of 2−30 eV. Features of the spectra of bulk and surface characteristic...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2007 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117997 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Calculation of the spectra of characteristic electron losses in indium bromide / M.O. Kolinko, O.V. Bovgyra // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 19-22. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | For the first time, the fundamental optical functions of single crystals of
layered indium bromide are calculated on the basis of polarization-dependent reflection
spectra at the liquid helium temperature in the energy region of 2−30 eV. Features of the
spectra of bulk and surface characteristic losses are examined, and the bulk and surface
plasmon energies have been obtained. The identification of the genetic origin of the
principal structures in the spectra is accomplished. The correlation between the energies
of long-wave plasmons and the energies of reflectivity minimum has been determined.
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| ISSN: | 1560-8034 |