Evolution of defective structure of the irradiated silicon during natural ageing
The defective structure of silicon single crystals grown by Chochralski method (Cz-Si) before and after an irradiation by high-energy electrons and gamma beams (E ~ 18 MeV) have been studied by the X-rey acoustic resonance method (XAR) and the method of low-frequency internal friction (LFIF). It is...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2003 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117998 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Evolution of defective structure of the irradiated silicon during natural ageing / I.M. Fodchuk, T.G. Gutsulyak, O.G. Himchynsky, A.V. Olijnich-Lysjuk, N.D. Raransky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 147-152. — Бібліогр.: 8 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862544630670688256 |
|---|---|
| author | Fodchuk, I.M. Gutsulyak, T.G. Himchynsky, O.G. Olijnich-Lysjuk, A.V. Raransky, N.D. |
| author_facet | Fodchuk, I.M. Gutsulyak, T.G. Himchynsky, O.G. Olijnich-Lysjuk, A.V. Raransky, N.D. |
| citation_txt | Evolution of defective structure of the irradiated silicon during natural ageing / I.M. Fodchuk, T.G. Gutsulyak, O.G. Himchynsky, A.V. Olijnich-Lysjuk, N.D. Raransky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 147-152. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The defective structure of silicon single crystals grown by Chochralski method (Cz-Si) before and after an irradiation by high-energy electrons and gamma beams (E ~ 18 MeV) have been studied by the X-rey acoustic resonance method (XAR) and the method of low-frequency internal friction (LFIF). It is shown the basic types of defects that created after irradiation, have the dislocation nature. But their stability is different. It is also shown that in Cz-Si at room temperature (more 10000 hours) the relaxation of radiation defects in the ageing process occurs on the background of disintegration of oxygen oversaturated solid solution in silicon accompanying with occurrence of essential internal tensions.
|
| first_indexed | 2025-11-25T01:19:36Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117998 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T01:19:36Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Fodchuk, I.M. Gutsulyak, T.G. Himchynsky, O.G. Olijnich-Lysjuk, A.V. Raransky, N.D. 2017-05-27T20:12:24Z 2017-05-27T20:12:24Z 2003 Evolution of defective structure of the irradiated silicon during natural ageing / I.M. Fodchuk, T.G. Gutsulyak, O.G. Himchynsky, A.V. Olijnich-Lysjuk, N.D. Raransky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 147-152. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 61.72.-y, 61.72.Dd https://nasplib.isofts.kiev.ua/handle/123456789/117998 The defective structure of silicon single crystals grown by Chochralski method (Cz-Si) before and after an irradiation by high-energy electrons and gamma beams (E ~ 18 MeV) have been studied by the X-rey acoustic resonance method (XAR) and the method of low-frequency internal friction (LFIF). It is shown the basic types of defects that created after irradiation, have the dislocation nature. But their stability is different. It is also shown that in Cz-Si at room temperature (more 10000 hours) the relaxation of radiation defects in the ageing process occurs on the background of disintegration of oxygen oversaturated solid solution in silicon accompanying with occurrence of essential internal tensions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Evolution of defective structure of the irradiated silicon during natural ageing Article published earlier |
| spellingShingle | Evolution of defective structure of the irradiated silicon during natural ageing Fodchuk, I.M. Gutsulyak, T.G. Himchynsky, O.G. Olijnich-Lysjuk, A.V. Raransky, N.D. |
| title | Evolution of defective structure of the irradiated silicon during natural ageing |
| title_full | Evolution of defective structure of the irradiated silicon during natural ageing |
| title_fullStr | Evolution of defective structure of the irradiated silicon during natural ageing |
| title_full_unstemmed | Evolution of defective structure of the irradiated silicon during natural ageing |
| title_short | Evolution of defective structure of the irradiated silicon during natural ageing |
| title_sort | evolution of defective structure of the irradiated silicon during natural ageing |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117998 |
| work_keys_str_mv | AT fodchukim evolutionofdefectivestructureoftheirradiatedsiliconduringnaturalageing AT gutsulyaktg evolutionofdefectivestructureoftheirradiatedsiliconduringnaturalageing AT himchynskyog evolutionofdefectivestructureoftheirradiatedsiliconduringnaturalageing AT olijnichlysjukav evolutionofdefectivestructureoftheirradiatedsiliconduringnaturalageing AT raranskynd evolutionofdefectivestructureoftheirradiatedsiliconduringnaturalageing |