Evolution of defective structure of the irradiated silicon during natural ageing

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2003
• Main Authors: Fodchuk, I.M., Gutsulyak, T.G., Himchynsky, O.G., Olijnich-Lysjuk, A.V., Raransky, N.D.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117998
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Evolution of defective structure of the irradiated silicon during natural ageing / I.M. Fodchuk, T.G. Gutsulyak, O.G. Himchynsky, A.V. Olijnich-Lysjuk, N.D. Raransky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 147-152. — Бібліогр.: 8 назв. — англ.

The defective structure of silicon single crystals grown by Chochralski method (Cz-Si) before and after an irradiation by high-energy electrons and gamma beams (E ~ 18 MeV) have been studied by the X-rey acoustic resonance method (XAR) and the method of low-frequency internal friction (LFIF). It is...