Ultrasound influence on exciton emission of GaP light diodes
Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while electroluminescence degradation occurred in structures treated by prolong treatment at...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2003 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118000 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Ultrasound influence on exciton emission of GaP light diodes / O.M. Gontaruk, V.I. Khivrych, M.B. Pinkovska, V.P. Tartachnyk, Ya.M. Olikh, R.M. Vernydub, V.Ya. Opilat // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 223-226. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862672725434171392 |
|---|---|
| author | Gontaruk, O.M. Khivrych, V.I. Pinkovska, M.B. Tartachnyk, V.P. Olikh, Ya.M. Vernydub, R.M. Opilat, V.Ya. |
| author_facet | Gontaruk, O.M. Khivrych, V.I. Pinkovska, M.B. Tartachnyk, V.P. Olikh, Ya.M. Vernydub, R.M. Opilat, V.Ya. |
| citation_txt | Ultrasound influence on exciton emission of GaP light diodes / O.M. Gontaruk, V.I. Khivrych, M.B. Pinkovska, V.P. Tartachnyk, Ya.M. Olikh, R.M. Vernydub, V.Ya. Opilat // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 223-226. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while electroluminescence degradation occurred in structures treated by prolong treatment at room temperature. Spectral curves measured under acoustic dynamic mode possess some specific features concerning fine structure. If reverse biased diodes possess microplasma initially, ultrasound action decreases its brightness. Possible mechanisms of the ultrasonic interaction with crystal structure defects have been discussed.
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| first_indexed | 2025-12-07T15:36:21Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-118000 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:36:21Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gontaruk, O.M. Khivrych, V.I. Pinkovska, M.B. Tartachnyk, V.P. Olikh, Ya.M. Vernydub, R.M. Opilat, V.Ya. 2017-05-28T05:44:52Z 2017-05-28T05:44:52Z 2003 Ultrasound influence on exciton emission of GaP light diodes / O.M. Gontaruk, V.I. Khivrych, M.B. Pinkovska, V.P. Tartachnyk, Ya.M. Olikh, R.M. Vernydub, V.Ya. Opilat // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 223-226. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 78.55.-m, 78.60.-b, 85.60.Jb https://nasplib.isofts.kiev.ua/handle/123456789/118000 Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while electroluminescence degradation occurred in structures treated by prolong treatment at room temperature. Spectral curves measured under acoustic dynamic mode possess some specific features concerning fine structure. If reverse biased diodes possess microplasma initially, ultrasound action decreases its brightness. Possible mechanisms of the ultrasonic interaction with crystal structure defects have been discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Ultrasound influence on exciton emission of GaP light diodes Article published earlier |
| spellingShingle | Ultrasound influence on exciton emission of GaP light diodes Gontaruk, O.M. Khivrych, V.I. Pinkovska, M.B. Tartachnyk, V.P. Olikh, Ya.M. Vernydub, R.M. Opilat, V.Ya. |
| title | Ultrasound influence on exciton emission of GaP light diodes |
| title_full | Ultrasound influence on exciton emission of GaP light diodes |
| title_fullStr | Ultrasound influence on exciton emission of GaP light diodes |
| title_full_unstemmed | Ultrasound influence on exciton emission of GaP light diodes |
| title_short | Ultrasound influence on exciton emission of GaP light diodes |
| title_sort | ultrasound influence on exciton emission of gap light diodes |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118000 |
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