Studies of CdHgTe as a material for x- and γ-ray detectors
Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and compensation degree, as well as the carrier lifetime and surface-recombination vel...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2003 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118001 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Studies of CdHgTe as a material for x- and γ-ray detectors / L.A. Kosyachenko, V.V. Kulchynsky, O.L. Maslyanchuk, S.Yu. Paranchych, V.M. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 227-232. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118001 |
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Kosyachenko, L.A. Kulchynsky, V.V. Maslyanchuk, O.L. Paranchych, S.Yu. Sklyarchuk, V.M. 2017-05-28T05:45:33Z 2017-05-28T05:45:33Z 2003 Studies of CdHgTe as a material for x- and γ-ray detectors / L.A. Kosyachenko, V.V. Kulchynsky, O.L. Maslyanchuk, S.Yu. Paranchych, V.M. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 227-232. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 72.80.Ey https://nasplib.isofts.kiev.ua/handle/123456789/118001 Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and compensation degree, as well as the carrier lifetime and surface-recombination velocity have been found. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Studies of CdHgTe as a material for x- and γ-ray detectors Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Studies of CdHgTe as a material for x- and γ-ray detectors |
| spellingShingle |
Studies of CdHgTe as a material for x- and γ-ray detectors Kosyachenko, L.A. Kulchynsky, V.V. Maslyanchuk, O.L. Paranchych, S.Yu. Sklyarchuk, V.M. |
| title_short |
Studies of CdHgTe as a material for x- and γ-ray detectors |
| title_full |
Studies of CdHgTe as a material for x- and γ-ray detectors |
| title_fullStr |
Studies of CdHgTe as a material for x- and γ-ray detectors |
| title_full_unstemmed |
Studies of CdHgTe as a material for x- and γ-ray detectors |
| title_sort |
studies of cdhgte as a material for x- and γ-ray detectors |
| author |
Kosyachenko, L.A. Kulchynsky, V.V. Maslyanchuk, O.L. Paranchych, S.Yu. Sklyarchuk, V.M. |
| author_facet |
Kosyachenko, L.A. Kulchynsky, V.V. Maslyanchuk, O.L. Paranchych, S.Yu. Sklyarchuk, V.M. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and compensation degree, as well as the carrier lifetime and surface-recombination velocity have been found.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118001 |
| citation_txt |
Studies of CdHgTe as a material for x- and γ-ray detectors / L.A. Kosyachenko, V.V. Kulchynsky, O.L. Maslyanchuk, S.Yu. Paranchych, V.M. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 227-232. — Бібліогр.: 19 назв. — англ. |
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| first_indexed |
2025-11-30T10:37:02Z |
| last_indexed |
2025-11-30T10:37:02Z |
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