Studies of CdHgTe as a material for x- and γ-ray detectors

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2003
• Hauptverfasser: Kosyachenko, L.A., Kulchynsky, V.V., Maslyanchuk, O.L., Paranchych, S.Yu., Sklyarchuk, V.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118001
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Studies of CdHgTe as a material for x- and γ-ray detectors / L.A. Kosyachenko, V.V. Kulchynsky, O.L. Maslyanchuk, S.Yu. Paranchych, V.M. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 227-232. — Бібліогр.: 19 назв. — англ.

Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and compensation degree, as well as the carrier lifetime and surface-recombination vel...