Shwarts, Y., Sokolov, V., Shwarts, M., & Venger, E. (2003). Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Shwarts, Yu.M, V.N Sokolov, M.M Shwarts, та E.F Venger. "Peculiarities of Injection Phenomena in Heavily Doped Silicon Structures and Development of Radiation-resistant Diode Temperature Sensors." Semiconductor Physics Quantum Electronics & Optoelectronics 2003.
Стиль цитування MLA (8-ме видання)Shwarts, Yu.M, et al. "Peculiarities of Injection Phenomena in Heavily Doped Silicon Structures and Development of Radiation-resistant Diode Temperature Sensors." Semiconductor Physics Quantum Electronics & Optoelectronics, 2003.