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Dielectric response of disordered ferroelectrics with embedded charged clusters

The model of static charged clusters, which adequately describes the dielectric hysteresis and permittivity of disordered ferroelectrics with non-isovalent impurities, has been proposed. The main result of paper is modified Landau-Ginzburg-Devonshire equation can be applied to the bulk ferroelectric...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2003
Hauptverfasser: Morozovska, A.N., Eliseev, E.A., Obukhovsky, V.V.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118003
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Dielectric response of disordered ferroelectrics with embedded charged clusters / A.N. Morozovska, E.A. Eliseev, V.V. Obukhovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 238-248. — Бібліогр.: 21 назв. — англ.

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