Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties

Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties

Single crystals of Cd₁₋x₋yMnyHgxTe:V (х = 0.05; у = 0.03-0.07, NV = 1∙10¹⁹ cm⁻³) have been grown and their electrical and optical properties have been studied. The transmission spectra of the samples with the composition x = 0.05; y = 0.07 were characterized by the minimum in the 3.5-5.5 μm spectral...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2003
Автори: Paranchych, S.Yu., Paranchych, L.D., Tanasyuk, Yu.V., Romanyuk, V.R., Makogonenko, V.M., Yurtsenyuk, R.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118005
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties / S.Yu. Paranchych, L.D. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, V.M. Makogonenko, R.M. Yurtsenyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 153-155. — Бібліогр.: 15 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118005
record_format dspace
spelling Paranchych, S.Yu.
Paranchych, L.D.
Tanasyuk, Yu.V.
Romanyuk, V.R.
Makogonenko, V.M.
Yurtsenyuk, R.M.
2017-05-28T05:51:49Z
2017-05-28T05:51:49Z
2003
Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties / S.Yu. Paranchych, L.D. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, V.M. Makogonenko, R.M. Yurtsenyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 153-155. — Бібліогр.: 15 назв. — англ.
1560-8034
https://nasplib.isofts.kiev.ua/handle/123456789/118005
Single crystals of Cd₁₋x₋yMnyHgxTe:V (х = 0.05; у = 0.03-0.07, NV = 1∙10¹⁹ cm⁻³) have been grown and their electrical and optical properties have been studied. The transmission spectra of the samples with the composition x = 0.05; y = 0.07 were characterized by the minimum in the 3.5-5.5 μm spectral range. In order to understand the nature of it the energy diagram of vanadium levels has been considered. The band gap of the studied solid solutions with different manganese content has been found from the absorption coefficient spectra and compared with those calculated.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
spellingShingle Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
Paranchych, S.Yu.
Paranchych, L.D.
Tanasyuk, Yu.V.
Romanyuk, V.R.
Makogonenko, V.M.
Yurtsenyuk, R.M.
title_short Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
title_full Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
title_fullStr Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
title_full_unstemmed Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
title_sort growing cd₁₋x₋ymnyhgxte single crystals and their optoelectronic properties
author Paranchych, S.Yu.
Paranchych, L.D.
Tanasyuk, Yu.V.
Romanyuk, V.R.
Makogonenko, V.M.
Yurtsenyuk, R.M.
author_facet Paranchych, S.Yu.
Paranchych, L.D.
Tanasyuk, Yu.V.
Romanyuk, V.R.
Makogonenko, V.M.
Yurtsenyuk, R.M.
publishDate 2003
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Single crystals of Cd₁₋x₋yMnyHgxTe:V (х = 0.05; у = 0.03-0.07, NV = 1∙10¹⁹ cm⁻³) have been grown and their electrical and optical properties have been studied. The transmission spectra of the samples with the composition x = 0.05; y = 0.07 were characterized by the minimum in the 3.5-5.5 μm spectral range. In order to understand the nature of it the energy diagram of vanadium levels has been considered. The band gap of the studied solid solutions with different manganese content has been found from the absorption coefficient spectra and compared with those calculated.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118005
citation_txt Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties / S.Yu. Paranchych, L.D. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, V.M. Makogonenko, R.M. Yurtsenyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 153-155. — Бібліогр.: 15 назв. — англ.
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AT romanyukvr growingcd1xymnyhgxtesinglecrystalsandtheiroptoelectronicproperties
AT makogonenkovm growingcd1xymnyhgxtesinglecrystalsandtheiroptoelectronicproperties
AT yurtsenyukrm growingcd1xymnyhgxtesinglecrystalsandtheiroptoelectronicproperties
first_indexed 2025-12-07T21:08:02Z
last_indexed 2025-12-07T21:08:02Z
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