One-dimensional warm electron transport in GaN quantum well wires at low temperatures
One-dimensional warm electron coefficient (β) and Ohmic mobility μ₀ in a square quantum well wire of GaN are studied for lattice temperatures in the range of 4-10 K, which are important from the application point of view. Electron scattering via deformation potential acoustic, piezoelectric, and ion...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118009 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | One-dimensional warm electron transport in GaN quantum well wires at low temperatures / S.K. Sarkar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 264-268. — Бібліогр.: 26 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862545296104357888 |
|---|---|
| author | Sarkar, S.K. |
| author_facet | Sarkar, S.K. |
| citation_txt | One-dimensional warm electron transport in GaN quantum well wires at low temperatures / S.K. Sarkar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 264-268. — Бібліогр.: 26 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | One-dimensional warm electron coefficient (β) and Ohmic mobility μ₀ in a square quantum well wire of GaN are studied for lattice temperatures in the range of 4-10 K, which are important from the application point of view. Electron scattering via deformation potential acoustic, piezoelectric, and ionized impurity are incorporated in the calculations. Carrier distribution is considered to be a heated Fermi-Dirac. Ohmic mobility (μ₀) is larger for a quantum well wires of greater width and decreases slowly with the rise of lattice temperature. β is negative, and its magnitude falls with increasing lattice temperature and is greater for wider width of the wire. The computed results are discussed in terms of the interplay of the various scattering mechanisms depending upon the model parameters.
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| first_indexed | 2025-11-25T06:39:52Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118009 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T06:39:52Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sarkar, S.K. 2017-05-28T06:02:25Z 2017-05-28T06:02:25Z 2003 One-dimensional warm electron transport in GaN quantum well wires at low temperatures / S.K. Sarkar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 264-268. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS: 72.20 Ht, 73.20 Dx, 73.60 Br. https://nasplib.isofts.kiev.ua/handle/123456789/118009 One-dimensional warm electron coefficient (β) and Ohmic mobility μ₀ in a square quantum well wire of GaN are studied for lattice temperatures in the range of 4-10 K, which are important from the application point of view. Electron scattering via deformation potential acoustic, piezoelectric, and ionized impurity are incorporated in the calculations. Carrier distribution is considered to be a heated Fermi-Dirac. Ohmic mobility (μ₀) is larger for a quantum well wires of greater width and decreases slowly with the rise of lattice temperature. β is negative, and its magnitude falls with increasing lattice temperature and is greater for wider width of the wire. The computed results are discussed in terms of the interplay of the various scattering mechanisms depending upon the model parameters. The author thankfully acknowledges the financial support availa le from University Grants Commission vide order no: F.14-32/2000 dated 12.10.2000. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics One-dimensional warm electron transport in GaN quantum well wires at low temperatures Article published earlier |
| spellingShingle | One-dimensional warm electron transport in GaN quantum well wires at low temperatures Sarkar, S.K. |
| title | One-dimensional warm electron transport in GaN quantum well wires at low temperatures |
| title_full | One-dimensional warm electron transport in GaN quantum well wires at low temperatures |
| title_fullStr | One-dimensional warm electron transport in GaN quantum well wires at low temperatures |
| title_full_unstemmed | One-dimensional warm electron transport in GaN quantum well wires at low temperatures |
| title_short | One-dimensional warm electron transport in GaN quantum well wires at low temperatures |
| title_sort | one-dimensional warm electron transport in gan quantum well wires at low temperatures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118009 |
| work_keys_str_mv | AT sarkarsk onedimensionalwarmelectrontransportinganquantumwellwiresatlowtemperatures |