Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment

We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the surface levels that have a high nonradiative recombination efficiency.

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2003
Main Authors: Kunets, V.P., Kulish, N.R., Strelchuk, V.V., Nazarov, A.N., Tkachenko, A.S., Lysenko, V.S., Lisitsa, M.P.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118011
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment / V.P. Kunets, N.R. Kulish, V.V. Strelchuk, A.N. Nazarov, A.S. Tkachenko, V.S. Lysenko, M.P. Lisitsa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 169-171. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118011
record_format dspace
spelling Kunets, V.P.
Kulish, N.R.
Strelchuk, V.V.
Nazarov, A.N.
Tkachenko, A.S.
Lysenko, V.S.
Lisitsa, M.P.
2017-05-28T06:05:17Z
2017-05-28T06:05:17Z
2003
Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment / V.P. Kunets, N.R. Kulish, V.V. Strelchuk, A.N. Nazarov, A.S. Tkachenko, V.S. Lysenko, M.P. Lisitsa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 169-171. — Бібліогр.: 13 назв. — англ.
1560-8034
PACS: 78.55.Et; 78.67.Hc; 71.55.Gs
https://nasplib.isofts.kiev.ua/handle/123456789/118011
We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the surface levels that have a high nonradiative recombination efficiency.
This work has been partially supported by the joint project "Physics of Solid State Nanostructures" between the Ukrainian State Foundation of Fundamental Researches and the Russian Foundation for the Basic Researches.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
spellingShingle Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
Kunets, V.P.
Kulish, N.R.
Strelchuk, V.V.
Nazarov, A.N.
Tkachenko, A.S.
Lysenko, V.S.
Lisitsa, M.P.
title_short Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
title_full Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
title_fullStr Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
title_full_unstemmed Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
title_sort enhancement of cdsse qd exciton luminescence efficiency by hydrogen rf plasma treatment
author Kunets, V.P.
Kulish, N.R.
Strelchuk, V.V.
Nazarov, A.N.
Tkachenko, A.S.
Lysenko, V.S.
Lisitsa, M.P.
author_facet Kunets, V.P.
Kulish, N.R.
Strelchuk, V.V.
Nazarov, A.N.
Tkachenko, A.S.
Lysenko, V.S.
Lisitsa, M.P.
publishDate 2003
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the surface levels that have a high nonradiative recombination efficiency.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118011
fulltext
citation_txt Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment / V.P. Kunets, N.R. Kulish, V.V. Strelchuk, A.N. Nazarov, A.S. Tkachenko, V.S. Lysenko, M.P. Lisitsa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 169-171. — Бібліогр.: 13 назв. — англ.
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AT lysenkovs enhancementofcdsseqdexcitonluminescenceefficiencybyhydrogenrfplasmatreatment
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first_indexed 2025-11-24T14:43:25Z
last_indexed 2025-11-24T14:43:25Z
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