Characteristics of confined exciton states in silicon quantum wires
We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within effective mass and classical image force approximations. As a result, e...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2003 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118013 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Characteristics of confined exciton states in silicon quantum wires / D.V. Korbutyak, Yu.V. Kryuchenko, I.M. Kupchak, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 172-182. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862724473331908608 |
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| author | Korbutyak, D.V. Kryuchenko, Yu.V. Kupchak, I.M. Sachenko, A.V. |
| author_facet | Korbutyak, D.V. Kryuchenko, Yu.V. Kupchak, I.M. Sachenko, A.V. |
| citation_txt | Characteristics of confined exciton states in silicon quantum wires / D.V. Korbutyak, Yu.V. Kryuchenko, I.M. Kupchak, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 172-182. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within effective mass and classical image force approximations. As a result, exciton binding energy, total energy of the exciton transition, radiative recombination time, intensity and internal quantum efficiency of the exciton photoluminescence (PL) in quantum wires (QW) have been obtained as functions of wire thickness, dielectric constants of adjacent materials, conduction and valence band-offsets. It was shown that even at room temperatures and moderate intensities of laser excitation the quantum efficiency of the exciton PL can achieve very high values (tens of %) in the case of extremely thin QWs (with thickness 1 - 3 nm). Moreover, according to theory, the exciton recombination time and the quantum efficiency have to be oscillating functions of QW thickness in thickness range 1 - 5 nm due to the indirect band-gap nature of silicon material.
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| first_indexed | 2025-12-07T18:47:24Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-118013 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:47:24Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| spelling | Korbutyak, D.V. Kryuchenko, Yu.V. Kupchak, I.M. Sachenko, A.V. 2017-05-28T06:07:41Z 2017-05-28T06:07:41Z 2003 Characteristics of confined exciton states in silicon quantum wires / D.V. Korbutyak, Yu.V. Kryuchenko, I.M. Kupchak, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 172-182. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS : 73.20.Dx, 78.66.-w https://nasplib.isofts.kiev.ua/handle/123456789/118013 We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within effective mass and classical image force approximations. As a result, exciton binding energy, total energy of the exciton transition, radiative recombination time, intensity and internal quantum efficiency of the exciton photoluminescence (PL) in quantum wires (QW) have been obtained as functions of wire thickness, dielectric constants of adjacent materials, conduction and valence band-offsets. It was shown that even at room temperatures and moderate intensities of laser excitation the quantum efficiency of the exciton PL can achieve very high values (tens of %) in the case of extremely thin QWs (with thickness 1 - 3 nm). Moreover, according to theory, the exciton recombination time and the quantum efficiency have to be oscillating functions of QW thickness in thickness range 1 - 5 nm due to the indirect band-gap nature of silicon material. This work was supported bу INTAS grant (INTAS Call 2001 NANO-0444), Russian-Ukrainian Program "Nanophуsics and nanoelectronics" and State Fundamental Researches Foundation of Ukraine. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Characteristics of confined exciton states in silicon quantum wires Article published earlier |
| spellingShingle | Characteristics of confined exciton states in silicon quantum wires Korbutyak, D.V. Kryuchenko, Yu.V. Kupchak, I.M. Sachenko, A.V. |
| title | Characteristics of confined exciton states in silicon quantum wires |
| title_full | Characteristics of confined exciton states in silicon quantum wires |
| title_fullStr | Characteristics of confined exciton states in silicon quantum wires |
| title_full_unstemmed | Characteristics of confined exciton states in silicon quantum wires |
| title_short | Characteristics of confined exciton states in silicon quantum wires |
| title_sort | characteristics of confined exciton states in silicon quantum wires |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118013 |
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