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Characteristics of confined exciton states in silicon quantum wires

We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within effective mass and classical image force approximations. As a result, e...

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Bibliographic Details
Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2003
Main Authors:	Korbutyak, D.V., Kryuchenko, Yu.V., Kupchak, I.M., Sachenko, A.V.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/118013
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Characteristics of confined exciton states in silicon quantum wires / D.V. Korbutyak, Yu.V. Kryuchenko, I.M. Kupchak, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 172-182. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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