Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations
Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. Layers were obtained for various substrate temperatures varying in the rang...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2003 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118014 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations / L. Pyziak, W. Obermayr, K. Zembrowska, M. Kuzma // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 183-188. — Бібліогр.: 40 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862656331405590528 |
|---|---|
| author | Pyziak, L. Obermayr, W. Zembrowska, K. Kuzma, M. |
| author_facet | Pyziak, L. Obermayr, W. Zembrowska, K. Kuzma, M. |
| citation_txt | Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations / L. Pyziak, W. Obermayr, K. Zembrowska, M. Kuzma // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 183-188. — Бібліогр.: 40 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. Layers were obtained for various substrate temperatures varying in the range from 600 K to 800 K. The topography of plane clusters formed were characterised by their fractal box-like dimension. The relation between this dimension and the shape of the clusters was addressed.
|
| first_indexed | 2025-12-02T04:16:39Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118014 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T04:16:39Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Pyziak, L. Obermayr, W. Zembrowska, K. Kuzma, M. 2017-05-28T06:08:18Z 2017-05-28T06:08:18Z 2003 Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations / L. Pyziak, W. Obermayr, K. Zembrowska, M. Kuzma // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 183-188. — Бібліогр.: 40 назв. — англ. 1560-8034 PACS: 02.70.Uu, 61.43.Bn https://nasplib.isofts.kiev.ua/handle/123456789/118014 Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. Layers were obtained for various substrate temperatures varying in the range from 600 K to 800 K. The topography of plane clusters formed were characterised by their fractal box-like dimension. The relation between this dimension and the shape of the clusters was addressed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations Article published earlier |
| spellingShingle | Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations Pyziak, L. Obermayr, W. Zembrowska, K. Kuzma, M. |
| title | Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations |
| title_full | Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations |
| title_fullStr | Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations |
| title_full_unstemmed | Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations |
| title_short | Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations |
| title_sort | topography of si epitaxial monolayers obtained on si (001) substrate by computer simulations |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118014 |
| work_keys_str_mv | AT pyziakl topographyofsiepitaxialmonolayersobtainedonsi001substratebycomputersimulations AT obermayrw topographyofsiepitaxialmonolayersobtainedonsi001substratebycomputersimulations AT zembrowskak topographyofsiepitaxialmonolayersobtainedonsi001substratebycomputersimulations AT kuzmam topographyofsiepitaxialmonolayersobtainedonsi001substratebycomputersimulations |