Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2003
• Main Authors: Pyziak, L., Obermayr, W., Zembrowska, K., Kuzma, M.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118014
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations / L. Pyziak, W. Obermayr, K. Zembrowska, M. Kuzma // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 183-188. — Бібліогр.: 40 назв. — англ.

Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. Layers were obtained for various substrate temperatures varying in the rang...