Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2003
• Main Authors: Bletskan, D.I., Lukyanchuk, O.R., Bletskan, O.D.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118015
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures / D.I. Bletskan, O.R. Lukyanchuk, O.D. Bletskan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 189-191. — Бібліогр.: 4 назв. — англ.

Luminescence spectra of blue and green LEDs based on InxGa₁₋xN/AlyGa₁₋yN/GaN heterostructures with many quantum wells in the current range 0.1 to 10 mA have been studied besides the main electroluminescence band. In the emission spectra of blue LEDs, the energy maximum position is shifted with chang...