Photovoltage and photocurrent spectroscopy of luminescent porous silicon
Measurements of photoconductivity, photovoltage and photoluminescence spectra of porous silicon/c-Si structures are carried out. It is shown that the shape of the photoconductivity and photovoltage spectra is caused mainly by bulk properties of porous silicon. Two components of the photovoltage spec...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2003 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118016 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photovoltage and photocurrent spectroscopy of luminescent porous silicon / O.V. Vakulenko, S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 192-196. — Бібліогр.: 30 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-118016 |
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Vakulenko, O.V. Kondratenko, S.V. 2017-05-28T06:12:13Z 2017-05-28T06:12:13Z 2003 Photovoltage and photocurrent spectroscopy of luminescent porous silicon / O.V. Vakulenko, S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 192-196. — Бібліогр.: 30 назв. — англ. 1560-8034 PACS: 72.40.+w https://nasplib.isofts.kiev.ua/handle/123456789/118016 Measurements of photoconductivity, photovoltage and photoluminescence spectra of porous silicon/c-Si structures are carried out. It is shown that the shape of the photoconductivity and photovoltage spectra is caused mainly by bulk properties of porous silicon. Two components of the photovoltage spectral dependence caused by porous silicon are observed. On the contrary, the one photoconductivity component is revealed. Moreover, the photoconductivity spectrum shape is found to depend on the value of the bias voltage and differ from the photovoltage spectrum in the short-wave region. The obtained results are explained within the model where the por-Si is considered as composite system of crystallites embedded in amourphous matrix of silicon compounds. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photovoltage and photocurrent spectroscopy of luminescent porous silicon Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Photovoltage and photocurrent spectroscopy of luminescent porous silicon |
| spellingShingle |
Photovoltage and photocurrent spectroscopy of luminescent porous silicon Vakulenko, O.V. Kondratenko, S.V. |
| title_short |
Photovoltage and photocurrent spectroscopy of luminescent porous silicon |
| title_full |
Photovoltage and photocurrent spectroscopy of luminescent porous silicon |
| title_fullStr |
Photovoltage and photocurrent spectroscopy of luminescent porous silicon |
| title_full_unstemmed |
Photovoltage and photocurrent spectroscopy of luminescent porous silicon |
| title_sort |
photovoltage and photocurrent spectroscopy of luminescent porous silicon |
| author |
Vakulenko, O.V. Kondratenko, S.V. |
| author_facet |
Vakulenko, O.V. Kondratenko, S.V. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Measurements of photoconductivity, photovoltage and photoluminescence spectra of porous silicon/c-Si structures are carried out. It is shown that the shape of the photoconductivity and photovoltage spectra is caused mainly by bulk properties of porous silicon. Two components of the photovoltage spectral dependence caused by porous silicon are observed. On the contrary, the one photoconductivity component is revealed. Moreover, the photoconductivity spectrum shape is found to depend on the value of the bias voltage and differ from the photovoltage spectrum in the short-wave region. The obtained results are explained within the model where the por-Si is considered as composite system of crystallites embedded in amourphous matrix of silicon compounds.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118016 |
| citation_txt |
Photovoltage and photocurrent spectroscopy of luminescent porous silicon / O.V. Vakulenko, S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 192-196. — Бібліогр.: 30 назв. — англ. |
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AT vakulenkoov photovoltageandphotocurrentspectroscopyofluminescentporoussilicon AT kondratenkosv photovoltageandphotocurrentspectroscopyofluminescentporoussilicon |
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2025-12-02T10:51:44Z |
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2025-12-02T10:51:44Z |
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