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Photovoltage and photocurrent spectroscopy of luminescent porous silicon

Measurements of photoconductivity, photovoltage and photoluminescence spectra of porous silicon/c-Si structures are carried out. It is shown that the shape of the photoconductivity and photovoltage spectra is caused mainly by bulk properties of porous silicon. Two components of the photovoltage spec...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2003
Main Authors: Vakulenko, O.V., Kondratenko, S.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118016
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Photovoltage and photocurrent spectroscopy of luminescent porous silicon / O.V. Vakulenko, S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 192-196. — Бібліогр.: 30 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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