Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices
We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to substantial slowdown of grain-boundary diffusion in Au-Mo-TiBx contacts resulting...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2003 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118027 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices / V.N. Ivanov, R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 311-315. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Ivanov, V.N. Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. 2017-05-28T08:41:00Z 2017-05-28T08:41:00Z 2003 Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices / V.N. Ivanov, R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 311-315. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 85.30.Fg https://nasplib.isofts.kiev.ua/handle/123456789/118027 We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to substantial slowdown of grain-boundary diffusion in Au-Mo-TiBx contacts resulting from use of amorphous TiBx layers as barrier material. A phase transition in them occurs at a temperature over 1000 °С. It was determined that use of TiBx as an antidiffusion layer in Au-TiBx-AuGe-n-GaAs ohmic contacts to Gunn diodes increases their service life as compared to the traditional Au-AuGe-n-GaAs ohmic contact. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices |
| spellingShingle |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices Ivanov, V.N. Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. |
| title_short |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices |
| title_full |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices |
| title_fullStr |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices |
| title_full_unstemmed |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices |
| title_sort |
heat-resistant ohmic and barrier contacts for gaas-based microwave devices |
| author |
Ivanov, V.N. Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. |
| author_facet |
Ivanov, V.N. Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to substantial slowdown of grain-boundary diffusion in Au-Mo-TiBx contacts resulting from use of amorphous TiBx layers as barrier material. A phase transition in them occurs at a temperature over 1000 °С. It was determined that use of TiBx as an antidiffusion layer in Au-TiBx-AuGe-n-GaAs ohmic contacts to Gunn diodes increases their service life as compared to the traditional Au-AuGe-n-GaAs ohmic contact.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118027 |
| citation_txt |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices / V.N. Ivanov, R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 311-315. — Бібліогр.: 7 назв. — англ. |
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| first_indexed |
2025-12-07T17:09:56Z |
| last_indexed |
2025-12-07T17:09:56Z |
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