Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2003
• Main Authors: Ivanov, V.N., Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118027
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices / V.N. Ivanov, R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 311-315. — Бібліогр.: 7 назв. — англ.

We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to substantial slowdown of grain-boundary diffusion in Au-Mo-TiBx contacts resulting...