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Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices

We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to substantial slowdown of grain-boundary diffusion in Au-Mo-TiBx contacts resulting...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2003
Hauptverfasser:	Ivanov, V.N., Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/118027
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices / V.N. Ivanov, R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 311-315. — Бібліогр.: 7 назв. — англ.

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