Properties of the shallow D-centers in semiconductors with polar and covalent binding

The theoretical consideration of the energy of the lowest singlet and triplet terms of shallow D¯-centers (two electrons, bound with one-charge Coulomb center) in semiconductors with an ionic and covalent binding has been carried out. The electron-phonon interaction is described by a Frцhlich Hamilt...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2003
Main Authors: Kashirina, N.I., Lakhno, V.D., Sychyov, V.V., Sheinkman, M.K.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118028
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Properties of the shallow D-centers in semiconductors with polar and covalent binding / N.I. Kashirina, V.D. Lakhno, V.V. Sychyov, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 269-273. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118028
record_format dspace
spelling Kashirina, N.I.
Lakhno, V.D.
Sychyov, V.V.
Sheinkman, M.K.
2017-05-28T08:46:47Z
2017-05-28T08:46:47Z
2003
Properties of the shallow D-centers in semiconductors with polar and covalent binding / N.I. Kashirina, V.D. Lakhno, V.V. Sychyov, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 269-273. — Бібліогр.: 12 назв. — англ.
1560-8034
PACS: 71.38, 73.20.D, 74.80.D
https://nasplib.isofts.kiev.ua/handle/123456789/118028
The theoretical consideration of the energy of the lowest singlet and triplet terms of shallow D¯-centers (two electrons, bound with one-charge Coulomb center) in semiconductors with an ionic and covalent binding has been carried out. The electron-phonon interaction is described by a Frцhlich Hamiltonian. The energy of D¯-center is described with the use of a Buimistrov-Pekar method of canonical transformations for arbitrary electron-phonon coupling. It is shown, that for all area of electron-phonon interaction parameters the Buimistrov-Pekar method yields the lowest values of the ground state energy of D¯-centers and free bipolaron in comparison with the best, for today, numerical calculations of the relevant values which have been carried out within the framework of the direct variation methods. The calculations have shown the lack of the bound metastable triplet states corresponding to the lowest triplet energy term of D¯-center and bipolaron for all the area of electron-phonon interaction parameters, in complete analogy to the Hill theorem about the lack of the bound excited states of H¯ ion. It is shown that the account of interaction with acoustic phonons can produce considerable lowering the ground state energy of D¯-center in comparison with the magnitude 1.0555Ry .
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Properties of the shallow D-centers in semiconductors with polar and covalent binding
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Properties of the shallow D-centers in semiconductors with polar and covalent binding
spellingShingle Properties of the shallow D-centers in semiconductors with polar and covalent binding
Kashirina, N.I.
Lakhno, V.D.
Sychyov, V.V.
Sheinkman, M.K.
title_short Properties of the shallow D-centers in semiconductors with polar and covalent binding
title_full Properties of the shallow D-centers in semiconductors with polar and covalent binding
title_fullStr Properties of the shallow D-centers in semiconductors with polar and covalent binding
title_full_unstemmed Properties of the shallow D-centers in semiconductors with polar and covalent binding
title_sort properties of the shallow d-centers in semiconductors with polar and covalent binding
author Kashirina, N.I.
Lakhno, V.D.
Sychyov, V.V.
Sheinkman, M.K.
author_facet Kashirina, N.I.
Lakhno, V.D.
Sychyov, V.V.
Sheinkman, M.K.
publishDate 2003
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The theoretical consideration of the energy of the lowest singlet and triplet terms of shallow D¯-centers (two electrons, bound with one-charge Coulomb center) in semiconductors with an ionic and covalent binding has been carried out. The electron-phonon interaction is described by a Frцhlich Hamiltonian. The energy of D¯-center is described with the use of a Buimistrov-Pekar method of canonical transformations for arbitrary electron-phonon coupling. It is shown, that for all area of electron-phonon interaction parameters the Buimistrov-Pekar method yields the lowest values of the ground state energy of D¯-centers and free bipolaron in comparison with the best, for today, numerical calculations of the relevant values which have been carried out within the framework of the direct variation methods. The calculations have shown the lack of the bound metastable triplet states corresponding to the lowest triplet energy term of D¯-center and bipolaron for all the area of electron-phonon interaction parameters, in complete analogy to the Hill theorem about the lack of the bound excited states of H¯ ion. It is shown that the account of interaction with acoustic phonons can produce considerable lowering the ground state energy of D¯-center in comparison with the magnitude 1.0555Ry .
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118028
citation_txt Properties of the shallow D-centers in semiconductors with polar and covalent binding / N.I. Kashirina, V.D. Lakhno, V.V. Sychyov, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 269-273. — Бібліогр.: 12 назв. — англ.
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AT lakhnovd propertiesoftheshallowdcentersinsemiconductorswithpolarandcovalentbinding
AT sychyovvv propertiesoftheshallowdcentersinsemiconductorswithpolarandcovalentbinding
AT sheinkmanmk propertiesoftheshallowdcentersinsemiconductorswithpolarandcovalentbinding
first_indexed 2025-12-07T19:46:47Z
last_indexed 2025-12-07T19:46:47Z
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