Properties of the shallow D-centers in semiconductors with polar and covalent binding

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2003
• ISSN: 1560-8034
• Hauptverfasser: Kashirina, N.I., Lakhno, V.D., Sychyov, V.V., Sheinkman, M.K.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118028
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Properties of the shallow D-centers in semiconductors with polar and covalent binding / N.I. Kashirina, V.D. Lakhno, V.V. Sychyov, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 269-273. — Бібліогр.: 12 назв. — англ.

The theoretical consideration of the energy of the lowest singlet and triplet terms of shallow D¯-centers (two electrons, bound with one-charge Coulomb center) in semiconductors with an ionic and covalent binding has been carried out. The electron-phonon interaction is described by a Frцhlich Hamilt...