Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide
An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free excitons by shallow neutral acceptors [bA₀X = (4 ± 2) 10⁻⁸ cm³/s] and donors [bD...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2003 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Zitieren: | Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 274-277. — Бібліогр.: 10 назв. — англ. |
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Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. 2017-05-28T08:49:56Z 2017-05-28T08:49:56Z 2003 Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 274-277. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 71.55. E; 78.55. E https://nasplib.isofts.kiev.ua/handle/123456789/118029 An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free excitons by shallow neutral acceptors [bA₀X = (4 ± 2) 10⁻⁸ cm³/s] and donors [bD₀X= (1.5 ± 0.8) 10⁻⁷ cm³/s] are found and also an estimate of the capture coefficient of free excitons by ionized shallow donors was made . en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide |
| spellingShingle |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| title_short |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide |
| title_full |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide |
| title_fullStr |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide |
| title_full_unstemmed |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide |
| title_sort |
capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide |
| author |
Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| author_facet |
Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| publishDate |
2003 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free excitons by shallow neutral acceptors [bA₀X = (4 ± 2) 10⁻⁸ cm³/s] and donors [bD₀X= (1.5 ± 0.8) 10⁻⁷ cm³/s] are found and also an estimate of the capture coefficient of free excitons by ionized shallow donors was made .
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118029 |
| citation_txt |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 274-277. — Бібліогр.: 10 назв. — англ. |
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| first_indexed |
2025-12-07T18:34:07Z |
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2025-12-07T18:34:07Z |
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