Injection currents in lamellar crystals of gallium telluride

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2003
• Main Authors: Madatov, R.S., Tagiyev, T.B., Gabulov, I.A., Abbasova, T.M.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118030
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Injection currents in lamellar crystals of gallium telluride / R.S. Madatov, T.B. Tagiyev, I.A. Gabulov, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 278-281. — Бібліогр.: 14 назв. — англ.

The results of researches of electrical properties and injection currents in lamellar samples of p-type gallium telluride with the purpose of determination of charge transfer mechanism both in the Ohm law regime and in the range of its violation in the wide temperature interval (77- 300) K have been...