Injection currents in lamellar crystals of gallium telluride

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2003
• Hauptverfasser: Madatov, R.S., Tagiyev, T.B., Gabulov, I.A., Abbasova, T.M.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118030
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Injection currents in lamellar crystals of gallium telluride / R.S. Madatov, T.B. Tagiyev, I.A. Gabulov, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 278-281. — Бібліогр.: 14 назв. — англ.

The results of researches of electrical properties and injection currents in lamellar samples of p-type gallium telluride with the purpose of determination of charge transfer mechanism both in the Ohm law regime and in the range of its violation in the wide temperature interval (77- 300) K have been...