Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures
Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and increasing mobility of 2D electrons in InAs quantum wells. In the case of AlAs...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2003 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118031 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures / M.Ya. Valakh, V.V. Strelchuk, O.F. Kolomys, H.L. Hartnagel, J. Sigmund // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 287-293. — Бібліогр.: 34 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862681108405026816 |
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| author | Valakh, M.Ya. Strelchuk, V.V. Kolomys, O.F. Hartnagel, H.L. Sigmund, J. |
| author_facet | Valakh, M.Ya. Strelchuk, V.V. Kolomys, O.F. Hartnagel, H.L. Sigmund, J. |
| citation_txt | Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures / M.Ya. Valakh, V.V. Strelchuk, O.F. Kolomys, H.L. Hartnagel, J. Sigmund // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 287-293. — Бібліогр.: 34 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and increasing mobility of 2D electrons in InAs quantum wells. In the case of AlAs interface at the heterojunction quantum well - barrier, the formation of AlSb₁₋xAsx solid solution takes place. Revealed are considerable concentration changes for 2D electrons at low temperatures in dependency on the excitation quantum energy.
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| first_indexed | 2025-12-07T15:49:58Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-118031 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:49:58Z |
| publishDate | 2003 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Valakh, M.Ya. Strelchuk, V.V. Kolomys, O.F. Hartnagel, H.L. Sigmund, J. 2017-05-28T09:02:53Z 2017-05-28T09:02:53Z 2003 Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures / M.Ya. Valakh, V.V. Strelchuk, O.F. Kolomys, H.L. Hartnagel, J. Sigmund // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 287-293. — Бібліогр.: 34 назв. — англ. 1560-8034 PACS: 63.22.+m, 72.10.Di, 78.30.-j https://nasplib.isofts.kiev.ua/handle/123456789/118031 Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and increasing mobility of 2D electrons in InAs quantum wells. In the case of AlAs interface at the heterojunction quantum well - barrier, the formation of AlSb₁₋xAsx solid solution takes place. Revealed are considerable concentration changes for 2D electrons at low temperatures in dependency on the excitation quantum energy. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures Article published earlier |
| spellingShingle | Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures Valakh, M.Ya. Strelchuk, V.V. Kolomys, O.F. Hartnagel, H.L. Sigmund, J. |
| title | Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures |
| title_full | Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures |
| title_fullStr | Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures |
| title_full_unstemmed | Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures |
| title_short | Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures |
| title_sort | resonance raman scattering by intersubband plasmon-phonon excitations in inas/alsb structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118031 |
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